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APT50GN60BDQ2G

Microchip Technology

APT50GN60BDQ2G by Microchip Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 366 W; Maximum Collector Current (IC): 107 A; Package Body Material: PLASTIC/EPOXY;

Median Price

$7.270

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 562 parts In-Stock

1+ parts

$7.270

100+ parts

$7.270

1k+ parts

$6.040

10k+ parts

$6.040

562

$7.270

$7.270

$6.040

$6.040

DigiKey

USA . 35 parts In-Stock

1+ parts

$7.270

100+ parts

$5.900

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-

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-

35

$7.270

$5.900

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Future Electronics

Canada . 20 parts In-Stock

1+ parts

-

100+ parts

$6.070

1k+ parts

$5.970

10k+ parts

-

20

-

$6.070

$5.970

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

1+ parts

-

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 5,335 parts In-Stock

1+ parts

$20.356

100+ parts

-

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5,335

$20.356

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QUARKTWIN TECHNOLOGY LTD

USA . 16,184 parts In-Stock

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16,184

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Marpe Global Electronics

Taiwan . 7,404 parts In-Stock

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7,404

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QualityLine Systems

Poland . 7,082 parts In-Stock

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7,082

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

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100+ parts

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7,000

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A-Z Elektronik GmbH

Germany . 4,683 parts In-Stock

1+ parts

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4,683

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Glotronic Ltd.

UK . 4,100 parts In-Stock

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4,100

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XL Components Corporation

Australia . 3,988 parts In-Stock

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3,988

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Alle Elektronik GmbH

Germany . 3,122 parts In-Stock

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3,122

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT50GN60BDQ2G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

MIL-STD-750

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

330 ns

Nominal Turn On Time (ton):

45 ns

Trade Compliance

APT50GN60BDQ2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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