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IXSN52N60AU1

IXYS Corporation

IXSN52N60AU1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 80 A; Case Connection: ISOLATED;

Median Price

$49.000

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 1 parts In-Stock

1+ parts

$49.000

100+ parts

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1

$49.000

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ACDS - Activité Composants Distribution Service

France . 56 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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56

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Bristol Electronics

USA . 26 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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26

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Atlantic Semiconductor

USA . 26 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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26

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 1,200 parts In-Stock

1+ parts

$35.890

100+ parts

-

1k+ parts

$25.125

10k+ parts

$25.125

1,200

$35.890

-

$25.125

$25.125

Microchip USA

USA . 218 parts In-Stock

1+ parts

$57.788

100+ parts

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1k+ parts

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218

$57.788

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXSN52N60AU1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

HIGH SPEED

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

250 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

790 ns

Nominal Turn On Time (ton):

290 ns

Maximum VCEsat:

3 V

Trade Compliance

IXSN52N60AU1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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