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IRGIB6B60KD

International Rectifier

IRGIB6B60KD by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Maximum Collector Current (IC): 11 A; JESD-609 Code: e0;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 693 parts In-Stock

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Vyrian

USA . 410 parts In-Stock

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410

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Corel Iberica Componentes, S.L.

Spain . 40 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.452

100+ parts

$0.411

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$0.371

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600

$0.452

$0.411

$0.371

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Modulus Dynamics

Lithuania . 14,442 parts In-Stock

1+ parts

$1.161

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$1.115

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$1.068

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14,442

$1.161

$1.115

$1.068

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 410 parts In-Stock

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410

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Assy Fe

Spain . 40 parts In-Stock

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40

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGIB6B60KD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

27 ns

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

26 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

258 ns

Nominal Turn On Time (ton):

45 ns

Trade Compliance

IRGIB6B60KD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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