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IRGB4045DPBF

International Rectifier

IRGB4045DPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 77 W; Maximum Collector Current (IC): 12 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;

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Digiode

USA . 976 parts In-Stock

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Vyrian

USA . 352 parts In-Stock

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ComSIT Distribution GmbH

Germany . 200 parts In-Stock

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ComSIT USA

USA . 200 parts In-Stock

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Modulus Dynamics

Lithuania . 25,385 parts In-Stock

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$1.287

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$1.234

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,694 parts In-Stock

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

Germany . 3,350 parts In-Stock

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Perfect Parts

USA . 336 parts In-Stock

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Corphita

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGB4045DPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

22 ns

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

15 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

127 ns

Nominal Turn On Time (ton):

38 ns

Trade Compliance

IRGB4045DPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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