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IRFS7434-7PPBF

International Rectifier

IRFS7434-7PPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 245 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

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Vyrian

USA . 813 parts In-Stock

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Digiode

USA . 253 parts In-Stock

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Cogito LLC

Ukraine . 217 parts In-Stock

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Semi Source

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Modulus Dynamics

Lithuania . 18,049 parts In-Stock

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$0.575

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$0.552

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$0.529

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18,049

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Microchip USA

USA . 1,657 parts In-Stock

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Corphita

USA . 791 parts In-Stock

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Perfect Parts

USA . 675 parts In-Stock

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Kepictronics

USA . 324 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRFS7434-7PPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

240 A

Maximum Drain Current (ID):

240 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

IRFS7434-7PPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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