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AUIRG4BC30SSTRR

International Rectifier

AUIRG4BC30SSTRR by International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 34 A; Moisture Sensitivity Level (MSL): 1;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 176 parts In-Stock

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176

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Vyrian

USA . 90 parts In-Stock

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90

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Modulus Dynamics

Lithuania . 13,036 parts In-Stock

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$0.830

100+ parts

$0.797

1k+ parts

$0.764

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13,036

$0.830

$0.797

$0.764

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Northwest PG Solutions

USA . 1,495 parts In-Stock

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1,495

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Native Components

USA . 981 parts In-Stock

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981

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Corphita

USA . 399 parts In-Stock

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399

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) AUIRG4BC30SSTRR attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

590 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1550 ns

Nominal Turn On Time (ton):

40 ns

Trade Compliance

AUIRG4BC30SSTRR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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