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S70KL1281DABHI023

Infineon Technologies

S70KL1281DABHI023 by Infineon Technologies

S70KL1281DABHI023 by Infineon Technologies is a 16MX8 MEMORY CIRCUIT with 134217728 bit memory density. It operates at 3V, has a temperature range of -40 to 85 °C, and uses CMOS technology. Suitable for industrial applications, it features a GRID ARRAY package style with very thin profile and bottom terminal position.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 3,325 parts In-Stock

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Vyrian

USA . 2,969 parts In-Stock

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2,969

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Flip Electronics

USA . 621 parts In-Stock

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621

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Digiode

USA . 497 parts In-Stock

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497

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 2,896 parts In-Stock

1+ parts

$4.405

100+ parts

$4.229

1k+ parts

$4.053

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2,896

$4.405

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$4.053

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Ampacity Inc.

Singapore . 3,224 parts In-Stock

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$15.000

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QUARKTWIN TECHNOLOGY LTD

USA . 25,919 parts In-Stock

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Bastille Electronics

Australia . 2,538 parts In-Stock

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Corphita

USA . 643 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the S70KL1281DABHI023 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies guarantees top-notch quality and reliability. This innovative Memory IC is perfect for a wide range of applications, offering seamless performance and unparalleled efficiency. With its advanced features and robust design, this product delivers exceptional value to customers, making it a smart investment for any project. Experience the difference with Infineon Technologies and take your technology to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection to the internal components of the memory IC, making it durable and long-lasting.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation enables faster data transfer rates and efficient communication between the memory IC and other components.

Nominal Supply Voltage / Vsup (V): 3

With a standard supply voltage of 3V, this memory IC is compatible with a wide range of systems and applications.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE

The grid array and thin profile design make this memory IC suitable for compact devices where space is limited.

Memory Width: 8

Having a memory width of 8 bits allows for efficient data processing and storage capabilities, suitable for various computing tasks.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this memory IC energy efficient and reliable.

Memory Density: 134217728 bit

High memory density provides ample storage capacity for data-intensive applications, ensuring smooth operation and performance.

Technical Specifications

Other Function Memory ICs S70KL1281DABHI023 attributes and parameters. Explore more Other Function Memory ICs devices from Infineon Technologies

Specs

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

24

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

S70KL1281DABHI023 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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