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IRLR8726TRPBF

Infineon Technologies

IRLR8726TRPBF by Infineon Technologies

Infineon's IRLR8726TRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 86A Max Drain Current, 0.058 ohm On Resistance, and 175°C Max Operating Temp. Suitable for high-power circuits requiring efficient switching capabilities in compact designs.

Median Price

$0.237

Lifecycle Status

Suppliers In-Stock

34

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1k+

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Newark

USA . 3,956 parts In-Stock

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$0.176

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$0.176

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$0.176

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$0.176

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$0.176

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DigiKey

USA . 57,023 parts In-Stock

1+ parts

$0.910

100+ parts

$0.366

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$0.254

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$0.190

57,023

$0.910

$0.366

$0.254

$0.190

Mouser Electronics

USA . 31,055 parts In-Stock

1+ parts

$0.970

100+ parts

$0.392

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$0.272

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$0.200

31,055

$0.970

$0.392

$0.272

$0.200

Adafruit Industries

USA . 100 parts In-Stock

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$1.102

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100

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Arrow

USA . 50,000 parts In-Stock

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Verical

USA . 50,000 parts In-Stock

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Avnet

USA . 34,000 parts In-Stock

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Future Electronics

Canada . 28,000 parts In-Stock

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Farnell

UK . 8,095 parts In-Stock

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Element14

Singapore . 8,095 parts In-Stock

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Germany . 6,000 parts In-Stock

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Rochester

USA . 2,445 parts In-Stock

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Distrelec

Netherlands . 1,807 parts In-Stock

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Chip1Stop

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Greenchips

USA . 3,999 parts In-Stock

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$0.163

100+ parts

$0.155

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$0.148

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$0.133

Digiode

USA . 161 parts In-Stock

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Maritex

Poland . 2,797 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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$0.273

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TME

Poland . 766 parts In-Stock

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$0.355

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Chip Stock

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IBS Electronics

USA . 34,000 parts In-Stock

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Infinite Electronics LLP

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Schukat

Germany . 5,550 parts In-Stock

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Rutronik

Germany . 4,000 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

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Micros

Poland . 2,680 parts In-Stock

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NAC Semi

USA . 2,000 parts In-Stock

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400

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Ampacity Inc.

Singapore . 10,075 parts In-Stock

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$0.126

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Semicontronic

India . 9,937 parts In-Stock

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Corphita

USA . 482 parts In-Stock

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Argo Parts USA

USA . 2,142 parts In-Stock

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Modulus Dynamics

Lithuania . 18,013 parts In-Stock

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$1.009

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$0.967

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,725 parts In-Stock

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Corohmni

South Africa . 32 parts In-Stock

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Infinite Electronics LLP (Excess)

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Metaverse IC Inc.

Canada . 240,000 parts In-Stock

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iodParts Technologies Inc.

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Epart123

USA . 28,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,696 parts In-Stock

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Spain . 11,775 parts In-Stock

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Robosynatics

Brazil . 7,803 parts In-Stock

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$1.210

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Lucentia Tech

USA . 7,803 parts In-Stock

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Kepictronics

USA . 4,500 parts In-Stock

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Germany . 4,365 parts In-Stock

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Microchip USA

USA . 3,883 parts In-Stock

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Continental Prestige Electronics

USA . 3,113 parts In-Stock

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$0.364

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A-Z Elektronik GmbH

Germany . 2,940 parts In-Stock

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Perfect Parts

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S.R.D Solutions

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Lixinc

USA . 311 parts In-Stock

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Overview

Power up your projects with the IRLR8726TRPBF by Infineon Technologies! This high-quality N-CHANNEL Power Field Effect Transistor is perfect for switching applications, offering a reliable and efficient solution for all your power needs. With a maximum drain current of 86A and a low on-resistance, this transistor provides exceptional performance and reliability. Whether you're working on robotics, automotive, or industrial projects, the IRLR8726TRPBF will deliver the power and efficiency you need to succeed. Trust Infineon Technologies for top-of-the-line components that deliver superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent insulation and protection for the internal components of the transistor, making it durable and long-lasting.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and lower on-resistance, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy circuit design and can protect against reverse voltage spikes, increasing the reliability of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can handle rapid changes in current and voltage with ease.

Surface Mount: YES

Being surface mountable makes this transistor easy to integrate into compact electronic devices and saves space on the PCB.

Minimum DS Breakdown Voltage: 30 V

With a breakdown voltage of 30V, this transistor can withstand high voltage spikes, ensuring the safety of the circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient PCB layout and makes it easy to handle during assembly.

Terminal Form: GULL WING

The gull wing terminals provide strong mechanical support and are suitable for automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control over the current flow, making them ideal for precise switching applications.

Maximum Pulsed Drain Current (IDM): 340 A

This high pulsed drain current rating allows the transistor to handle short duration, high current pulses without overheating.

Avalanche Energy Rating (EAS): 120 mJ

The high avalanche energy rating ensures that the transistor can withstand voltage spikes and surges without damage.

Maximum Drain Current (Abs) (ID): 86 A

With a maximum drain current rating of 86A, this transistor can handle high continuous currents without overheating.

No. of Terminals: 2

The two terminals simplify the connection process and reduce the chances of wiring errors.

Maximum Power Dissipation (Abs): 75 W

This high power dissipation rating allows the transistor to handle large amounts of power without failure.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this transistor suitable for compact electronic devices with limited space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers low on-resistance and high switching speeds, making it ideal for high-performance applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can handle high temperature environments without losing performance.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and stability, ensuring the longevity of the transistor.

Terminal Finish: MATTE TIN OVER NICKEL

The matte tin finish over nickel provides excellent solderability and corrosion resistance, ensuring a solid electrical connection.

Maximum Drain-Source On Resistance: 0.058 ohm

The low on-resistance of 0.058 ohms reduces power losses and improves efficiency in the circuit.

Terminal Position: SINGLE

The single terminal position simplifies the assembly process and reduces the chances of incorrect wiring.

Case Connection: DRAIN

The drain connection is suitable for applications where the drain voltage is significant and needs to be isolated from other circuit elements.

Maximum Time At Peak Reflow Temperature (s): 30

This short reflow time at peak temperature ensures the reliability of the solder joints during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures that the solder joints are properly melted and create strong electrical connections.

Technical Specifications

Power Field Effect Transistors (FET) IRLR8726TRPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

120 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

86 A

Maximum Drain Current (ID):

86 A

Maximum Drain-Source On Resistance:

.058 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

340 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRLR8726TRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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