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IPN70R360P7SATMA1

Infineon Technologies

IPN70R360P7SATMA1 by Infineon Technologies

IPN70R360P7SATMA1 by Infineon is a N-CHANNEL FET with 700V DS breakdown voltage, 0.36 ohm RDS(on), and built-in diode. Ideal for switching applications, it operates in enhancement mode with a temperature range of -40°C and features a gull wing terminal form.

Median Price

$0.572

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 505 parts In-Stock

1+ parts

$1.297

100+ parts

$0.553

1k+ parts

$0.391

10k+ parts

$0.332

505

$1.297

$0.553

$0.391

$0.332

DigiKey

USA . 6 parts In-Stock

1+ parts

$1.350

100+ parts

$0.563

1k+ parts

$0.399

10k+ parts

$0.311

6

$1.350

$0.563

$0.399

$0.311

Newark

USA . 3,747 parts In-Stock

1+ parts

$1.430

100+ parts

$0.685

1k+ parts

$0.629

10k+ parts

-

3,747

$1.430

$0.685

$0.629

-

Mouser Electronics

USA . 164 parts In-Stock

1+ parts

$1.540

100+ parts

$0.625

1k+ parts

$0.448

10k+ parts

$0.359

164

$1.540

$0.625

$0.448

$0.359

Verical

USA . 71,355 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.429

10k+ parts

$0.383

71,355

-

-

$0.429

$0.383

Rochester

USA . 71,355 parts In-Stock

1+ parts

-

100+ parts

$0.414

1k+ parts

$0.344

10k+ parts

$0.306

71,355

-

$0.414

$0.344

$0.306

Future Electronics

Canada . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.580

18,000

-

-

-

$0.580

RS (Exports)

UK . 8,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.374

8,780

-

-

-

$0.374

Element14

Singapore . 6,047 parts In-Stock

1+ parts

-

100+ parts

$0.565

1k+ parts

$0.391

10k+ parts

$0.383

6,047

-

$0.565

$0.391

$0.383

Chip1Stop

Japan . 2,667 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,667

-

-

-

-

Farnell

UK . 1,912 parts In-Stock

1+ parts

-

100+ parts

$0.367

1k+ parts

$0.359

10k+ parts

$0.323

1,912

-

$0.367

$0.359

$0.323

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 756 parts In-Stock

1+ parts

$0.340

100+ parts

-

1k+ parts

-

10k+ parts

-

756

$0.340

-

-

-

Digiode

USA . 948 parts In-Stock

1+ parts

$0.500

100+ parts

-

1k+ parts

-

10k+ parts

-

948

$0.500

-

-

-

Chip Stock

USA . 121,170 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

121,170

-

-

-

-

Rutronik

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.270

3,000

-

-

-

$0.270

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 580 parts In-Stock

1+ parts

$0.473

100+ parts

-

1k+ parts

-

10k+ parts

-

580

$0.473

-

-

-

Modulus Dynamics

Lithuania . 6,173 parts In-Stock

1+ parts

$0.591

100+ parts

$0.567

1k+ parts

$0.544

10k+ parts

-

6,173

$0.591

$0.567

$0.544

-

Continental Prestige Electronics

USA . 6,697 parts In-Stock

1+ parts

$1.060

100+ parts

$0.638

1k+ parts

$0.419

10k+ parts

$0.351

6,697

$1.060

$0.638

$0.419

$0.351

Perfect Parts

USA . 6,727 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,727

-

-

-

-

GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

A-Z Elektronik GmbH

Germany . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,500

-

-

-

-

Overview

Unleash the power of cutting-edge technology with the IPN70R360P7SATMA1 by Infineon Technologies. Crafted with precision and expertise, this Small Signal Field Effect Transistor offers unparalleled quality and reliability. Ideal for switching applications, this N-CHANNEL transistor boasts a 700V minimum DS breakdown voltage and a low on-resistance of 0.36 ohm. With its sleek rectangular package design and gull wing terminals, this transistor is ready to revolutionize your electronics projects. Elevate your creations with the IPN70R360P7SATMA1 and experience the exceptional performance and value it brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides robust protection and durability, making the transistor suitable for various environments and applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching and control of current flow in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode, reducing the need for additional components.

Transistor Application: SWITCHING

Ideal for applications that require high-speed switching operations with minimal power loss.

Surface Mount: YES

Facilitates easy and space-efficient PCB mounting, suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 700 V

Provides high voltage tolerance, making the transistor suitable for high-power applications.

Package Shape: RECTANGULAR

Offers easy handling and placement on PCBs during assembly.

Terminal Form: GULL WING

Enables secure and reliable soldering connections for improved performance.

Operating Mode: ENHANCEMENT MODE

Allows for precise control of the transistor's conductivity, enhancing overall circuit efficiency.

No. of Terminals: 3

Provides essential connections for the transistor's functionality in a streamlined package.

Package Style (Meter): SMALL OUTLINE

Occupies minimal space on the PCB, ideal for compact electronic designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high-performance characteristics and reliability in various operating conditions.

Transistor Element Material: SILICON

Provides stable and consistent performance over a wide temperature range.

Minimum Operating Temperature: -40 °C

Ensures reliable operation in harsh environmental conditions, enhancing the transistor's versatility.

Terminal Finish: TIN

Enhances solderability and corrosion resistance for long-lasting connections.

Maximum Drain-Source On Resistance: 0.36 ohm

Offers low on-resistance for efficient power management and minimal voltage drop.

Terminal Position: DUAL

Allows for flexible PCB layout and connection options in various circuit configurations.

Case Connection: DRAIN

Facilitates efficient current flow and heat dissipation, ensuring reliable operation under high loads.

Technical Specifications

Small Signal Field Effect Transistors (FET) IPN70R360P7SATMA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

700 V

Maximum Drain-Source On Resistance:

.36 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPN70R360P7SATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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