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IPN70R1K4P7SATMA1

Infineon Technologies

IPN70R1K4P7SATMA1 by Infineon Technologies

Infineon's IPN70R1K4P7SATMA1 is a N-CHANNEL FET with 700V DS breakdown voltage, ideal for switching applications. It features a built-in diode, 1.4 ohm RDS(on), and operates in enhancement mode. This small outline transistor has GULL WING terminals and can withstand temperatures as low as -40°C.

Median Price

$0.418

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 1,412 parts In-Stock

1+ parts

$0.665

100+ parts

$0.395

1k+ parts

$0.213

10k+ parts

$0.211

1,412

$0.665

$0.395

$0.213

$0.211

DigiKey

USA . 29,020 parts In-Stock

1+ parts

$0.860

100+ parts

$0.348

1k+ parts

$0.241

10k+ parts

$0.182

29,020

$0.860

$0.348

$0.241

$0.182

Mouser Electronics

USA . 7,647 parts In-Stock

1+ parts

$0.860

100+ parts

$0.346

1k+ parts

$0.238

10k+ parts

$0.187

7,647

$0.860

$0.346

$0.238

$0.187

Newark

USA . 3,219 parts In-Stock

1+ parts

$0.900

100+ parts

$0.405

1k+ parts

$0.301

10k+ parts

-

3,219

$0.900

$0.405

$0.301

-

Verical

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.159

24,000

-

-

-

$0.159

RS (Exports)

UK . 9,050 parts In-Stock

1+ parts

-

100+ parts

$0.418

1k+ parts

$0.363

10k+ parts

$0.337

9,050

-

$0.418

$0.363

$0.337

Rochester

USA . 2,183 parts In-Stock

1+ parts

-

100+ parts

$0.222

1k+ parts

$0.184

10k+ parts

$0.164

2,183

-

$0.222

$0.184

$0.164

Chip1Stop

Japan . 616 parts In-Stock

1+ parts

-

100+ parts

$0.319

1k+ parts

$0.258

10k+ parts

-

616

-

$0.319

$0.258

-

Farnell

UK . 39 parts In-Stock

1+ parts

-

100+ parts

$0.281

1k+ parts

$0.196

10k+ parts

$0.156

39

-

$0.281

$0.196

$0.156

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 633 parts In-Stock

1+ parts

$0.176

100+ parts

-

1k+ parts

-

10k+ parts

-

633

$0.176

-

-

-

Nova Conductors

Japan . 98 parts In-Stock

1+ parts

$0.304

100+ parts

-

1k+ parts

-

10k+ parts

-

98

$0.304

-

-

-

TME

Poland . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.159

15,000

-

-

-

$0.159

Chip Stock

USA . 8,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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8,500

-

-

-

-

Rutronik

Germany . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.139

6,000

-

-

-

$0.139

Vyrian

USA . 2,924 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,924

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,691 parts In-Stock

1+ parts

$0.157

100+ parts

-

1k+ parts

-

10k+ parts

-

3,691

$0.157

-

-

-

Semicontronic

India . 3,507 parts In-Stock

1+ parts

$0.157

100+ parts

$0.153

1k+ parts

$0.152

10k+ parts

-

3,507

$0.157

$0.153

$0.152

-

Corphita

USA . 105 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

10k+ parts

-

105

$0.166

-

-

-

Argo Parts USA

USA . 1,522 parts In-Stock

1+ parts

$0.293

100+ parts

-

1k+ parts

-

10k+ parts

$0.284

1,522

$0.293

-

-

$0.284

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.298

100+ parts

-

1k+ parts

$0.286

10k+ parts

-

2,000

$0.298

-

$0.286

-

Modulus Dynamics

Lithuania . 11,181 parts In-Stock

1+ parts

$0.333

100+ parts

$0.320

1k+ parts

$0.306

10k+ parts

-

11,181

$0.333

$0.320

$0.306

-

Corohmni

South Africa . 657 parts In-Stock

1+ parts

$0.333

100+ parts

-

1k+ parts

-

10k+ parts

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657

$0.333

-

-

-

Continental Prestige Electronics

USA . 1,807 parts In-Stock

1+ parts

$0.476

100+ parts

$0.320

1k+ parts

$0.203

10k+ parts

$0.174

1,807

$0.476

$0.320

$0.203

$0.174

Aztec Data Supply Inc.

USA . 200 parts In-Stock

1+ parts

$0.640

100+ parts

-

1k+ parts

-

10k+ parts

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200

$0.640

-

-

-

Perfect Parts

USA . 10,114 parts In-Stock

1+ parts

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100+ parts

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10,114

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Microchip USA

USA . 3,286 parts In-Stock

1+ parts

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100+ parts

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3,286

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-

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,000

-

-

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GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,000

-

-

-

-

Allen Electronics Distributors

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.492

1k+ parts

-

10k+ parts

-

50

-

$0.492

-

-

Overview

Enhance your electronic projects with the IPN70R1K4P7SATMA1 by Infineon Technologies. Manufactured with superior quality and expertise, this small signal field effect transistor offers a wide range of applications in switching technology. With its high breakdown voltage of 700V and low drain-source resistance of 1.4 ohm, this N-channel transistor provides reliable performance and efficiency. Experience enhanced functionality and versatility with the IPN70R1K4P7SATMA1, the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better performance characteristics compared to P-channel transistors, making this product a good choice for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode in the single configuration enhances the functionality of the transistor, allowing for more versatile usage.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for efficient and reliable performance in such scenarios.

Minimum DS Breakdown Voltage: 700 V

The high breakdown voltage of 700V ensures that the transistor can handle high voltage applications with ease, making it a reliable choice for demanding environments.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement on circuit boards, providing convenience in the manufacturing process.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and connection, simplifying the installation process for the user.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer improved performance and control characteristics, making this transistor a preferable choice for many applications.

No. of Terminals: 3

The 3 terminals provide the necessary connections for the transistor to function properly, ensuring correct operation in the circuit.

Package Style: SMALL OUTLINE

The small outline package style saves space on the circuit board, making it ideal for designs where size is a constraint.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability and performance, making this transistor a durable and efficient choice for various applications.

Transistor Element Material: SILICON

Silicon transistors are known for their superior performance and reliability, making this product a trusted choice for electronic applications.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40°C ensures that the transistor can function reliably in a wide range of environmental conditions.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance, ensuring long-term performance and durability of the transistor.

Maximum Drain-Source On Resistance: 1.4 ohm

The low drain-source on resistance of 1.4 ohms ensures efficient power handling and minimal loss in the switching process, making this transistor an energy-efficient choice.

Terminal Position: DUAL

The dual terminal position allows for easy and secure connections, ensuring stable operation of the transistor in the circuit.

Case Connection: DRAIN

The drain case connection offers convenient routing and connection options, enhancing the versatility and usability of the transistor in different circuit configurations.

Technical Specifications

Small Signal Field Effect Transistors (FET) IPN70R1K4P7SATMA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

700 V

Maximum Drain-Source On Resistance:

1.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPN70R1K4P7SATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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