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IPN70R2K0P7SATMA1

Infineon Technologies

IPN70R2K0P7SATMA1 by Infineon Technologies

Infineon's IPN70R2K0P7SATMA1 is a N-CHANNEL FET with 700V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it has 2 ohm RDS(on) and operates in enhancement mode. This small outline package transistor is surface mountable and has a temperature range of -40°C.

Median Price

$0.311

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 13,161 parts In-Stock

1+ parts

$0.800

100+ parts

$0.322

1k+ parts

$0.221

10k+ parts

$0.167

13,161

$0.800

$0.322

$0.221

$0.167

Mouser Electronics

USA . 8,907 parts In-Stock

1+ parts

$0.880

100+ parts

$0.355

1k+ parts

$0.244

10k+ parts

$0.169

8,907

$0.880

$0.355

$0.244

$0.169

Avnet

USA . 27,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.113

27,000

-

-

-

$0.113

Arrow

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.163

6,000

-

-

-

$0.163

RS (Exports)

UK . 2,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.270

2,900

-

-

-

$0.270

Farnell

UK . 2,813 parts In-Stock

1+ parts

-

100+ parts

$0.261

1k+ parts

$0.199

10k+ parts

$0.179

2,813

-

$0.261

$0.199

$0.179

Element14

Singapore . 2,813 parts In-Stock

1+ parts

-

100+ parts

$0.458

1k+ parts

$0.315

10k+ parts

$0.309

2,813

-

$0.458

$0.315

$0.309

Verical

USA . 2,678 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.333

10k+ parts

$0.331

2,678

-

-

$0.333

$0.331

Chip1Stop

Japan . 2,678 parts In-Stock

1+ parts

-

100+ parts

$0.311

1k+ parts

$0.211

10k+ parts

$0.185

2,678

-

$0.311

$0.211

$0.185

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 93 parts In-Stock

1+ parts

$0.293

100+ parts

-

1k+ parts

-

10k+ parts

-

93

$0.293

-

-

-

Digiode

USA . 108 parts In-Stock

1+ parts

$0.551

100+ parts

-

1k+ parts

-

10k+ parts

-

108

$0.551

-

-

-

TME

Poland . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.151

60,000

-

-

-

$0.151

Rutronik

Germany . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.134

54,000

-

-

-

$0.134

IBS Electronics

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.131

42,000

-

-

-

$0.131

Chip Stock

USA . 26,880 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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26,880

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-

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Vyrian

USA . 5,645 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,645

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 5,681 parts In-Stock

1+ parts

$0.139

100+ parts

$0.136

1k+ parts

$0.135

10k+ parts

-

5,681

$0.139

$0.136

$0.135

-

Ampacity Inc.

Singapore . 5,659 parts In-Stock

1+ parts

$0.139

100+ parts

-

1k+ parts

-

10k+ parts

-

5,659

$0.139

-

-

-

Argo Parts USA

USA . 2,226 parts In-Stock

1+ parts

$0.293

100+ parts

-

1k+ parts

-

10k+ parts

$0.284

2,226

$0.293

-

-

$0.284

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.293

100+ parts

-

1k+ parts

$0.278

10k+ parts

$0.272

2,000

$0.293

-

$0.278

$0.272

Modulus Dynamics

Lithuania . 21,384 parts In-Stock

1+ parts

$0.311

100+ parts

$0.299

1k+ parts

$0.286

10k+ parts

-

21,384

$0.311

$0.299

$0.286

-

Corohmni

South Africa . 814 parts In-Stock

1+ parts

$0.311

100+ parts

-

1k+ parts

-

10k+ parts

-

814

$0.311

-

-

-

Corphita

USA . 27 parts In-Stock

1+ parts

$0.522

100+ parts

-

1k+ parts

-

10k+ parts

-

27

$0.522

-

-

-

Component Stockers USA

USA . 10,236 parts In-Stock

1+ parts

$0.560

100+ parts

$0.330

1k+ parts

$0.210

10k+ parts

-

10,236

$0.560

$0.330

$0.210

-

Aztec Data Supply Inc.

USA . 3,012 parts In-Stock

1+ parts

$1.102

100+ parts

-

1k+ parts

-

10k+ parts

-

3,012

$1.102

-

-

-

Authorized Procurement Solutions

USA . 4,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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4,500

-

-

-

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Continental Prestige Electronics

USA . 3,412 parts In-Stock

1+ parts

-

100+ parts

$0.331

1k+ parts

$0.211

10k+ parts

$0.168

3,412

-

$0.331

$0.211

$0.168

RC Electronics

USA . 2,840 parts In-Stock

1+ parts

-

100+ parts

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2,840

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-

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A-Z Elektronik GmbH

Germany . 1,146 parts In-Stock

1+ parts

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100+ parts

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1,146

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-

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Speed Components Ltd (Excess)

Israel . 72 parts In-Stock

1+ parts

-

100+ parts

-

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-

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72

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-

-

-

Overview

Enhance your electronics projects with the IPN70R2K0P7SATMA1 from Infineon Technologies! As a leading manufacturer in the industry, Infineon ensures top-quality components for reliable performance. This small signal field effect transistor is perfect for a variety of switching applications, offering a high DS breakdown voltage of 700V and low drain-source on resistance of 2 ohm. With its N-channel polarity and single configuration with built-in diode, this transistor provides enhanced functionality and efficiency. Trust Infineon to deliver exceptional value and benefits to meet all your project needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY -

This material provides durability and protection, making it a reliable choice for a variety of applications.

Polarity or Channel Type: N-CHANNEL -

N-channel transistors offer high conductivity and efficiency, making them suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE -

The built-in diode enhances the performance and functionality of the transistor, making it versatile for various uses.

Transistor Application: SWITCHING -

Designed specifically for switching applications, this transistor offers fast and efficient operation.

Surface Mount: YES -

The surface mount feature allows for easy installation and space-saving design in compact electronic devices.

Minimum DS Breakdown Voltage: 700 V -

With a high breakdown voltage, this transistor can withstand high voltages, ensuring reliability in demanding environments.

Package Shape: RECTANGULAR -

The rectangular shape provides a compact and efficient design for easy integration into electronic circuits.

Terminal Form: GULL WING -

The gull wing terminal form offers strong connections and secure soldering for stable performance.

Operating Mode: ENHANCEMENT MODE -

The enhancement mode operation allows for precise control and fast switching speeds, ideal for various applications.

No. of Terminals: 3 -

With three terminals, this transistor offers flexibility in circuit design and connectivity options.

Package Style (Meter): SMALL OUTLINE -

The small outline package style saves space and allows for high-density mounting on PCBs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR -

The metal-oxide semiconductor technology provides high performance and efficiency in signal control.

Transistor Element Material: SILICON -

Silicon material offers high durability and conductivity, ensuring long-lasting performance in different conditions.

Minimum Operating Temperature: -40 °C -

With a minimum operating temperature of -40°C, this transistor is suitable for use in various environments.

Terminal Finish: TIN -

The tin terminal finish ensures reliable soldering connections and corrosion resistance for extended product lifespan.

Maximum Drain-Source On Resistance: 2 ohm -

With low resistance, this transistor minimizes power loss and heat generation, improving efficiency in circuit operations.

Terminal Position: DUAL -

The dual terminal position allows for versatile installation and connection options in electronic circuits.

Case Connection: DRAIN -

The drain case connection provides efficient heat dissipation and ensures stable performance under high-power conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) IPN70R2K0P7SATMA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

700 V

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPN70R2K0P7SATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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