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IPD30N06S215ATMA2

Infineon Technologies

IPD30N06S215ATMA2 by Infineon Technologies

Infineon's IPD30N06S215ATMA2 is a N-CHANNEL FET with 55V DS Breakdown Voltage, 120A IDM, and 0.0147 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

Median Price

$0.829

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 6,918 parts In-Stock

1+ parts

$0.828

100+ parts

$0.760

1k+ parts

-

10k+ parts

-

6,918

$0.828

$0.760

-

-

Arrow

USA . 502 parts In-Stock

1+ parts

$0.830

100+ parts

$0.651

1k+ parts

$0.603

10k+ parts

-

502

$0.830

$0.651

$0.603

-

Adafruit Industries

USA . 10 parts In-Stock

1+ parts

$0.937

100+ parts

$0.937

1k+ parts

$0.937

10k+ parts

-

10

$0.937

$0.937

$0.937

-

DigiKey

USA . 5,964 parts In-Stock

1+ parts

$2.080

100+ parts

$0.897

1k+ parts

$0.676

10k+ parts

$0.552

5,964

$2.080

$0.897

$0.676

$0.552

Mouser Electronics

USA . 1,890 parts In-Stock

1+ parts

$2.170

100+ parts

$0.855

1k+ parts

$0.689

10k+ parts

$0.632

1,890

$2.170

$0.855

$0.689

$0.632

Rochester

USA . 11,394 parts In-Stock

1+ parts

-

100+ parts

$0.750

1k+ parts

$0.623

10k+ parts

$0.555

11,394

-

$0.750

$0.623

$0.555

Verical

USA . 5,239 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.779

10k+ parts

$0.694

5,239

-

-

$0.779

$0.694

RS (Exports)

UK . 2,410 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.362

2,410

-

-

-

$0.362

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 154 parts In-Stock

1+ parts

$0.505

100+ parts

-

1k+ parts

-

10k+ parts

-

154

$0.505

-

-

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.918

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.918

-

-

-

Vyrian

USA . 4,781 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,781

-

-

-

-

Prism Electronics

USA . 12 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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12

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 142 parts In-Stock

1+ parts

$0.479

100+ parts

-

1k+ parts

-

10k+ parts

-

142

$0.479

-

-

-

Semicontronic

India . 4,697 parts In-Stock

1+ parts

$0.510

100+ parts

$0.497

1k+ parts

$0.495

10k+ parts

-

4,697

$0.510

$0.497

$0.495

-

Ampacity Inc.

Singapore . 4,613 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

-

10k+ parts

-

4,613

$0.510

-

-

-

Component Stockers USA

USA . 17,892 parts In-Stock

1+ parts

$0.720

100+ parts

$0.680

1k+ parts

$0.600

10k+ parts

-

17,892

$0.720

$0.680

$0.600

-

Argo Parts USA

USA . 2,975 parts In-Stock

1+ parts

$0.918

100+ parts

-

1k+ parts

-

10k+ parts

-

2,975

$0.918

-

-

-

Continental Prestige Electronics

USA . 393 parts In-Stock

1+ parts

$0.918

100+ parts

-

1k+ parts

-

10k+ parts

$0.900

393

$0.918

-

-

$0.900

Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.937

100+ parts

$0.937

1k+ parts

$0.937

10k+ parts

-

10

$0.937

$0.937

$0.937

-

Aztec Data Supply Inc.

USA . 4,516 parts In-Stock

1+ parts

$1.238

100+ parts

-

1k+ parts

-

10k+ parts

-

4,516

$1.238

-

-

-

Modulus Dynamics

Lithuania . 14,825 parts In-Stock

1+ parts

$1.294

100+ parts

$1.242

1k+ parts

$1.190

10k+ parts

-

14,825

$1.294

$1.242

$1.190

-

Corohmni

South Africa . 83 parts In-Stock

1+ parts

$1.685

100+ parts

-

1k+ parts

-

10k+ parts

-

83

$1.685

-

-

-

Microchip USA

USA . 6,763 parts In-Stock

1+ parts

$5.010

100+ parts

-

1k+ parts

-

10k+ parts

-

6,763

$5.010

-

-

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Perfect Parts

USA . 28,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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28,000

-

-

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,500

-

-

-

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iodParts Technologies Inc.

India . 2,270 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,270

-

-

-

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.900

1k+ parts

$0.872

10k+ parts

$0.854

100

-

$0.900

$0.872

$0.854

Overview

Unleash the power of cutting-edge technology with the IPD30N06S215ATMA2 by Infineon Technologies. Designed with precision and innovation, this Power Field Effect Transistor offers unparalleled performance and reliability. From automotive to industrial applications, this N-CHANNEL FET is a game-changer in enhancing efficiency and power management. With its high-quality construction and advanced features, customers can trust in the value and benefits that this product brings to their projects. Upgrade your systems with the IPD30N06S215ATMA2 and experience the difference Infineon Technologies makes in driving success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

Offers efficient performance and low on-state resistance for power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and adds protection against reverse voltage spikes.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and labor costs.

Minimum DS Breakdown Voltage: 55 V

Suitable for a wide range of voltage applications, offering flexibility and versatility.

Package Shape: RECTANGULAR

Optimizes PCB space utilization and allows for compact designs.

Operating Mode: ENHANCEMENT MODE

Provides faster switching speed and lower conduction losses, improving overall efficiency.

Maximum Pulsed Drain Current (IDM): 120 A

Supports high current capacity for demanding power applications.

Avalanche Energy Rating (EAS): 240 mJ

Offers robustness against transient voltage spikes and ensures reliable operation under extreme conditions.

No. of Terminals: 2

Simplifies circuit connections and reduces complexity for ease of integration.

Package Style (Meter): SMALL OUTLINE

Facilitates compact and space-efficient PCB layout designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high-speed performance, low power consumption, and excellent reliability.

Transistor Element Material: SILICON

Provides high electron mobility and superior thermal performance for efficient power handling.

Minimum Operating Temperature: -55 °C

Ensures reliable operation in extreme temperature conditions, suitable for a wide range of applications.

Terminal Finish: TIN

Enhances solderability and ensures reliable electrical connections.

Maximum Drain Current (ID): 30 A

Provides high continuous current-carrying capability for power applications.

Maximum Drain-Source On Resistance: 0.0147 ohm

Ensures low power dissipation and high efficiency in power conversion applications.

Terminal Position: SINGLE

Streamlines circuit layout and simplifies connections for easy integration.

Case Connection: DRAIN

Enables efficient heat dissipation and enhances overall thermal performance.

Reference Standard: AEC-Q101

Complies with automotive industry standards for quality and reliability, suitable for automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) IPD30N06S215ATMA2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

240 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (ID):

30 A

Maximum Drain-Source On Resistance:

.0147 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

120 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

IPD30N06S215ATMA2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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