Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Infineon's IPD122N10N3GATMA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.0122 ohm RDS(on), and 236A IDM. Ideal for switching applications, it operates in enhancement mode with a max temp of 175°C.
Median Price
$0.866
Lifecycle Status
Suppliers In-Stock
20
In-Stock Inventory
1k+
Chip1Stop
1+ parts
$0.965
100+ parts
-
1k+ parts
10k+ parts
Mouser Electronics
$1.940
$0.868
$0.675
$0.646
Newark
$2.110
$1.040
DigiKey
$2.630
$1.141
$0.834
Farnell
$0.738
$0.474
Element14
$1.330
$0.848
Verical
$0.597
Arrow
$0.493
RS (Exports)
$0.688
Rochester
$0.767
$0.636
$0.567
Digiode
$0.372
Nova Conductors
$0.845
TME
$1.770
$0.814
$0.644
$0.596
IBS Electronics
$0.673
Vyrian
Rutronik
$0.580
NAC Semi
$1.340
J2 Sourcing AB
Inventory MP
Bristol Electronics
Ampacity Inc.
$0.333
Semicontronic
$0.325
$0.323
Corphita
$0.353
Argo Parts USA
Netroflash
$0.828
Allen Electronics Distributors
$0.945
$0.660
Modulus Dynamics
$1.292
$1.240
$1.189
Continental Prestige Electronics
$1.320
Aztec Data Supply Inc.
$1.570
Corohmni
$1.687
Authorized Procurement Solutions
QUARKTWIN TECHNOLOGY LTD
Lixinc
Microchip USA
Perfect Parts
Glotronic Ltd.
Metaverse IC Inc.
GreenTree Electronics
The plastic/epoxy package body material helps in protecting the internal components of the FET from external environmental factors, ensuring durability and reliability.
N-channel FETs are known for their high efficiency and fast switching speeds, making them ideal for various switching applications.
The built-in diode allows for safe and efficient handling of reverse voltage, preventing damage to the FET and increasing overall system reliability.
Designed specifically for switching applications, this FET offers excellent performance and reliability in controlling the flow of power.
Being surface mountable makes the FET easy to integrate into compact electronic designs, saving space and simplifying the assembly process.
With a high DS breakdown voltage, this FET can handle high voltage applications with ease, ensuring safe and reliable operation.
The rectangular package shape allows for easy mounting and alignment on circuit boards, facilitating efficient assembly processes.
The gull wing terminal form provides secure and reliable connections, reducing the risk of intermittent connections and ensuring stable performance.
Enhancement mode FETs offer easy and precise control over the switching operation, allowing for efficient power management in various applications.
The high pulsed drain current rating enables this FET to handle sudden spikes in current, making it suitable for demanding applications with varying loads.
The high avalanche energy rating indicates the FET's ability to withstand voltage transients and surges, enhancing its reliability in harsh operating conditions.
Having only two terminals simplifies the wiring and connection process, reducing the likelihood of errors and ensuring a straightforward integration into the circuit.
The small outline package style saves space on the circuit board, enabling compact and streamlined electronic designs without compromising performance.
Metal-oxide semiconductor technology offers high efficiency and reliability, making this FET suitable for a wide range of applications requiring precise power control.
With a high maximum operating temperature, this FET can withstand elevated temperatures without compromising its performance, ensuring reliable operation in harsh environments.
Silicon-based transistor elements provide excellent performance characteristics, including high conductivity and resistance to temperature variations, making this FET a reliable choice for diverse applications.
The tin terminal finish enhances the FET's solderability and ensures secure and reliable connections, contributing to the overall durability and long-term performance of the component.
The high maximum drain current rating allows this FET to handle substantial power loads, making it suitable for high-current applications that require robust performance.
The low drain-source on resistance minimizes power loss and heat generation, improving the efficiency and overall performance of the FET in power switching applications.
Having a single terminal position simplifies the connection process and ensures proper alignment, reducing the risk of installation errors and enhancing the FET's reliability.
The drain case connection enhances the FET's thermal management capabilities, allowing for efficient heat dissipation and ensuring reliable operation even under high load conditions.
Power Field Effect Transistors (FET) IPD122N10N3GATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
IPD122N10N3GATMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
43025-0400
Molex
The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.
RC0402FR-0710KL
Yageo
Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.
SMBJ18CA
Meritek Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
CRCW06030000Z0EAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06030000Z0EAHP is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating temp range -55 to 155 °C, it's SMT package style makes it ideal for automotive applications meeting AEC-Q200 standard.
1N4148WT
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
L7805CV
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Output Voltage-1: 5 V;
1N4148
Renesas Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
Taitron Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
LL4148
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
General Instrument
BSS123,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
LM555CMX
Texas Instruments
LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.
LM555CM
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
ULN2803ADWR
ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.
LM555CN
Rca Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
CC0603KRX7R9BB104
Yageo's CC0603KRX7R9BB104 is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. With X7R temperature characteristics, it operates b/w -55 to 125°C. Ideal for surface mount applications in electronics due to its compact size of 1.6mm x 0.8mm x 0.8mm and wraparound terminals.
FDS8858CZ
Fairchild Semiconductor
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;
BSS138
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;
SQ2318AES-T1_GE3
Vishay Intertechnology's SQ2318AES-T1_GE3 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A IDM. Ideal for applications requiring high current handling capabilities, such as power supplies and motor control systems. Features include 8A ID, 0.031ohm RDS(on), and 46pF Crss for efficient performance in various electronic devices.
FDMS86300DC
FDMS86300DC by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM Pulsed Drain Current, 0.0031 ohm RDS(ON), and 240mJ EAS Avalanche Energy Rating. With a max power dissipation of 125W and operating temperature up to 150°C, it is suitable for high-power switching circuits in various electronic devices.
STP55NF06
STMicroelectronics
STP55NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 200A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
CSD19536KTTT
CSD19536KTTT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Pulsed Drain Current of 400A, Min DS Breakdown Voltage of 100V, and Max Operating Temperature of 175°C. With a low on-resistance of 0.0028 ohm, this MOSFET is ideal for high-power switching circuits.
SI7489DP-T1-GE3
Vishay Intertechnology's SI7489DP-T1-GE3 is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A IDM, 61mJ EAS, and 0.041 ohm Drain-Source On Resistance. Operating in Enhancement Mode, it has a max temp of 150°C and -55°C min temp.
IRF3415STRLPBF
Infineon Technologies
IRF3415STRLPBF by Infineon is a N-CHANNEL FET with 150V DS Breakdown Voltage and 43A Max Drain Current. It is used for SWITCHING applications, featuring a built-in DIODE, 0.042 ohm Max RDS(on), and 150A IDM. The transistor operates in ENHANCEMENT MODE, has a GULL WING terminal form, and comes in a SMALL OUTLINE package style.
FQD1N80TM
FQD1N80TM by Onsemi is a N-CHANNEL Power FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 4A and EAS of 90mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in small outline designs at up to 150°C.
IRF540NSTRRPBF
IRF540NSTRRPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 33A Drain Current. It's used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 130W. Ideal for high-power electronic circuits requiring efficient switching capabilities.
FQB34N20LTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
FQD3P50TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
IRLML0100TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: TO-236AB;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
BSS138BKS,115
NXP Semiconductors
NXP Semiconductors' BSS138BKS,115 is an N-CHANNEL Power FET with 0.32A max drain current and 0.99W power dissipation. Ideal for surface mount applications, it operates in enhancement mode at up to 150°C.
FQD2N100TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Minimum DS Breakdown Voltage: 1000 V; Avalanche Energy Rating (EAS): 160 mJ;
MSC035SMA170B
Power Field-Effect Transistors;
AUIRF4905STRL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 55 V;
AUIRF7759L2TR
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 375 A; No. of Elements: 1;
FDBL86062_F085
Fairchild Semiconductor's FDBL86062_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features an EAS of 352mJ, 0.002 ohm On Resistance, and operates in ENHANCEMENT MODE.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
IPD180N10N3GATMA1
Infineon Technologies' IPD180N10N3GATMA1 is a power FET with N-channel configuration and built-in diode. It is suitable for switching applications, offering a min DS breakdown voltage of 100V and max pulsed drain current of 172A. Its small outline package style and low on-resistance make it ideal for various electronic devices.
IPD12CN10NGATMA1
IPD12CN10NGATMA1 by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 268A IDM, and 0.0124 ohm max RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package with GULL WING terminals. Operating in enhancement mode, it can handle up to 175°C temperature.
IPD100N04S402ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 40 V; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-252;
IPD135N08N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Pulsed Drain Current (IDM): 180 A; JESD-609 Code: e3;
IPD100N04S4-02
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; JESD-609 Code: e3; Maximum Operating Temperature: 175 Cel;
IPD135N03LGATMA1
IPD135N03LGATMA1 by Infineon is a N-CHANNEL FET with 30V DS breakdown voltage and 30A max drain current. Ideal for switching applications, it features a built-in diode, 210A pulsed drain current, and 0.0135 ohm max on resistance.
IPD110N12N3GATMA1
IPD110N12N3GATMA1 by Infineon is a N-CHANNEL FET with 120V DS Breakdown Voltage, 300A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 175 °C. The PLASTIC/EPOXY package with GULL WING terminals ensures reliable performance.
IPD110N12N3GBUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; No. of Terminals: 2; Avalanche Energy Rating (EAS): 120 mJ;
IPD105N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE;
IPD122N10N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2;
IPD105N03LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Avalanche Energy Rating (EAS): 30 mJ; Terminal Form: GULL WING;
IPD100N06S4-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Case Connection: DRAIN; Avalanche Energy Rating (EAS): 300 mJ;
IPD105N04LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
IPD105N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
IPD11DP10NM
IPD100N04S4L02ATMA1
Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Finish: Tin (Sn);
IPD105N04LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Avalanche Energy Rating (EAS): 10 mJ; JEDEC-95 Code: TO-252AA;
IPD100N06S403ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0035 ohm; No. of Elements: 1; Avalanche Energy Rating (EAS): 300 mJ;
IPD10N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Minimum DS Breakdown Voltage: 25 V; Moisture Sensitivity Level (MSL): 1;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved