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HGTD7N60C3

Harris Semiconductor

HGTD7N60C3 by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 14 A; Qualification: Not Qualified;

Median Price

$1.190

Lifecycle Status

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4

In-Stock Inventory

1k+

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Rochester

USA . 225 parts In-Stock

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$1.190

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$0.987

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$0.880

225

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$1.190

$0.987

$0.880

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Digiode

USA . 29 parts In-Stock

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$0.926

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29

$0.926

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Vyrian

USA . 914 parts In-Stock

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$0.975

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914

$0.975

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ABC Electronics Ltd.

UK . 87 parts In-Stock

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87

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Corphita

USA . 647 parts In-Stock

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$0.878

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647

$0.878

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Microchip USA

USA . 6,380 parts In-Stock

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$6.110

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Kepictronics

USA . 25,800 parts In-Stock

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25,800

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Supply Digital

USA . 2,942 parts In-Stock

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2,942

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTD7N60C3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Harris Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

275 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

490 ns

Nominal Turn On Time (ton):

20 ns

Trade Compliance

HGTD7N60C3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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