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MRF8P20161HSR3

Freescale Semiconductor

MRF8P20161HSR3 by Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Operating Mode: ENHANCEMENT MODE; Peak Reflow Temperature (C): 260;

Median Price

$106.864

Lifecycle Status

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Rochester

USA . 1,217 parts In-Stock

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$94.990

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$84.990

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$79.990

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DigiKey

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Verical

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$118.737

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$106.237

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$99.987

995

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$99.987

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Nova Conductors

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Digiode

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Vyrian

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Anansix

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Singapore . 917 parts In-Stock

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$89.940

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One Stop Electronics

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Continental Prestige Electronics

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Microchip USA

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Technical Specifications

RF Power Field Effect Transistors (FET) MRF8P20161HSR3 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFP-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF8P20161HSR3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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