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MRF8P20140WGHSR3

Freescale Semiconductor

MRF8P20140WGHSR3 by Freescale Semiconductor

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): NOT APPLICABLE;

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Vyrian

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Digiode

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Anansix

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.556

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One Stop Electronics

USA . 1,865 parts In-Stock

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UNI Independent Distributors

Spain . 7,641 parts In-Stock

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Corphita

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Microchip USA

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Technical Specifications

RF Power Field Effect Transistors (FET) MRF8P20140WGHSR3 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL):

NOT APPLICABLE

Maximum Operating Temperature:

125 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

MRF8P20140WGHSR3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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