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SGP13N60UFDTU

Fairchild Semiconductor

SGP13N60UFDTU by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; Package Shape: RECTANGULAR;

Median Price

$1.530

Lifecycle Status

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7

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1k+

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Adafruit Industries

USA . 600 parts In-Stock

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$0.850

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$0.774

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$0.697

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$0.850

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Rochester

USA . 9,677 parts In-Stock

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$1.530

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$1.270

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$1.130

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Verical

USA . 9,000 parts In-Stock

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$1.587

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$1.413

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Digiode

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$0.808

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Vyrian

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DigiKey Marketplace

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Corphita

USA . 1,248 parts In-Stock

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$0.765

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$0.850

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$0.774

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$0.697

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$0.850

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$0.697

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Corohmni

South Africa . 177 parts In-Stock

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$0.850

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Component Stockers USA

USA . 22,510 parts In-Stock

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$1.270

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$1.190

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$1.080

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Continental Prestige Electronics

USA . 9,879 parts In-Stock

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TANS Electronics

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Supply Digital

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SupplyDigital Components

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Kulean Microsystems

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UHIMA Technologies

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGP13N60UFDTU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fairchild Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

280 ns

Maximum Gate-Emitter Threshold Voltage:

7.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

253 ns

Nominal Turn On Time (ton):

62 ns

Trade Compliance

SGP13N60UFDTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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