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FS150R12KF4

Eupec & Kg

FS150R12KF4 by Eupec & Kg

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 27;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Tech-Mark Corp

USA . 2 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FS150R12KF4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JESD-30 Code:

R-XUFM-X27

No. of Elements:

6

No. of Terminals:

27

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1050 ns

Nominal Turn On Time (ton):

700 ns

Maximum VCEsat:

2.7 V

Trade Compliance

FS150R12KF4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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