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FD800R17KF6B2

Eupec & Kg

FD800R17KF6B2 by Eupec & Kg

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1600 A; Maximum Gate-Emitter Voltage: 20 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 98 parts In-Stock

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98

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Vyrian

USA . 70 parts In-Stock

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70

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Distributors (Availability)

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Native Components

USA . 309 parts In-Stock

1+ parts

$0.113

100+ parts

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$0.109

309

$0.113

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$0.109

Northwest PG Solutions

USA . 527 parts In-Stock

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$0.125

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$0.110

527

$0.125

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$0.110

Modulus Dynamics

Lithuania . 3,390 parts In-Stock

1+ parts

$0.913

100+ parts

$0.876

1k+ parts

$0.840

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3,390

$0.913

$0.876

$0.840

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Corphita

USA . 661 parts In-Stock

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661

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FD800R17KF6B2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X10

No. of Elements:

1

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1100 ns

Nominal Turn On Time (ton):

300 ns

Maximum VCEsat:

3.1 V

Trade Compliance

FD800R17KF6B2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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