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BSM50GAL120DN2

Eupec & Kg

BSM50GAL120DN2 by Eupec & Kg

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 50 A; No. of Terminals: 7;

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Northwest PG Solutions

USA . 1,529 parts In-Stock

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Andel Nordic

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM50GAL120DN2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

1

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

450 ns

Nominal Turn On Time (ton):

100 ns

Maximum VCEsat:

3.2 V

Trade Compliance

BSM50GAL120DN2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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