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ZTX1053A

Diodes Incorporated

ZTX1053A by Diodes Incorporated

ZTX1053A by Diodes Inc. is a NPN BJT transistor with 3 terminals, capable of handling up to 1W power dissipation and 3A collector current. With a min hFE of 100 and max operating temp of 200°C, it's ideal for switching applications at frequencies up to 140MHz.

Median Price

$0.907

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 7,882 parts In-Stock

1+ parts

$0.907

100+ parts

$0.440

1k+ parts

$0.326

10k+ parts

$0.298

7,882

$0.907

$0.440

$0.326

$0.298

Newark

USA . 973 parts In-Stock

1+ parts

$1.610

100+ parts

$0.710

1k+ parts

$0.524

10k+ parts

$0.510

973

$1.610

$0.710

$0.524

$0.510

Verical

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.350

16,000

-

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-

$0.350

Distributors (In-Stock)

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Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.455

100+ parts

-

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-

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700

$0.455

-

-

-

Chip Stock

USA . 74,000 parts In-Stock

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74,000

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Vyrian

USA . 4,982 parts In-Stock

1+ parts

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4,982

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QIE Inc.

USA . 98 parts In-Stock

1+ parts

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98

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Prism Electronics

USA . 84 parts In-Stock

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84

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J2 Sourcing AB

Sweden . 25 parts In-Stock

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25

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 4,495 parts In-Stock

1+ parts

$0.446

100+ parts

-

1k+ parts

-

10k+ parts

$0.433

4,495

$0.446

-

-

$0.433

Continental Prestige Electronics

USA . 1,286 parts In-Stock

1+ parts

$0.446

100+ parts

-

1k+ parts

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10k+ parts

$0.437

1,286

$0.446

-

-

$0.437

Aztec Data Supply Inc.

USA . 2,748 parts In-Stock

1+ parts

$0.550

100+ parts

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2,748

$0.550

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Ampacity Inc.

Singapore . 4,910 parts In-Stock

1+ parts

$0.770

100+ parts

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4,910

$0.770

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Corohmni

South Africa . 156 parts In-Stock

1+ parts

$1.368

100+ parts

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156

$1.368

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Perfect Parts

USA . 14,645 parts In-Stock

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14,645

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Infinite Electronics LLP (Excess)

. 1,001 parts In-Stock

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1,001

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Lixinc

USA . 379 parts In-Stock

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379

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Overview

Upgrade your electronic projects with the ZTX1053A from Diodes Incorporated, a leading manufacturer of high-quality components. This NPN Small Signal Bipolar Junction Transistor is perfect for switching applications, offering a maximum collector current of 3A and a minimum DC current gain of 100. With a maximum operating temperature of 200°C and a peak reflow temperature of 260°C, this transistor ensures reliable performance in demanding environments. Trust Diodes Incorporated to provide you with the best-in-class components for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are suitable for many electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making the transistor easier to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into various electronics projects.

Terminal Form: WIRE

The wire terminals make it easy to connect the transistor to other components, facilitating assembly.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 1 W

With a high maximum power dissipation, this transistor can handle demanding applications without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and space-saving design for efficient use of PCB real estate.

Minimum DC Current Gain (hFE): 100

A high DC current gain ensures the transistor amplifies the input signal effectively, making it reliable for various applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and operate reliably in harsh environments.

Maximum Collector-Emitter Voltage: 75 V

The high collector-emitter voltage rating allows this transistor to handle higher voltage circuits without breakdown.

Transistor Element Material: SILICON

Silicon is a common semiconductor material with good electrical properties, making this transistor a reliable choice for electronic applications.

Maximum Collector Current (IC): 3 A

With a high collector current rating, this transistor can handle high current loads without overheating or failing.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and conductivity, ensuring reliable connections in electronic assemblies.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and integration, making the transistor easier to mount and solder.

Maximum Time At Peak Reflow Temperature (s): 30

This specifies the maximum time the transistor can be exposed to peak reflow temperature during soldering, ensuring proper bonding and reliability.

Peak Reflow Temperature °C: 260

260°C peak reflow temperature allows for efficient and reliable soldering of the transistor onto PCBs.

Nominal Transition Frequency (fT): 140 MHz

With a high nominal transition frequency, this transistor is suitable for high-frequency applications such as RF amplification or signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX1053A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

75 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX1053A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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