Loading...

ZTX1049A

Diodes Incorporated

ZTX1049A by Diodes Incorporated

ZTX1049A by Diodes Inc. is a NPN BJT transistor with 1W power dissipation, hFE of 35, and max. collector current of 4A. Ideal for switching applications at up to 200°C, it has a max. VCE of 25V and fT of 180MHz in a plastic package with matte tin finish and wire terminals.

Median Price

$0.744

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,828 parts In-Stock

1+ parts

$1.210

100+ parts

$0.498

1k+ parts

$0.351

10k+ parts

$0.271

6,828

$1.210

$0.498

$0.351

$0.271

DigiKey

USA . 7,815 parts In-Stock

1+ parts

$1.280

100+ parts

$0.528

1k+ parts

$0.372

10k+ parts

$0.291

7,815

$1.280

$0.528

$0.372

$0.291

Verical

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.278

44,000

-

-

-

$0.278

Arrow

USA . 3,745 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.252

10k+ parts

$0.228

3,745

-

-

$0.252

$0.228

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 1,125 parts In-Stock

1+ parts

$0.750

100+ parts

$0.300

1k+ parts

$0.210

10k+ parts

$0.195

1,125

$0.750

$0.300

$0.210

$0.195

Chip Stock

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33,000

-

-

-

-

ComSIT Distribution GmbH

Germany . 3,265 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,265

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Benley Electronics

USA . 78 parts In-Stock

1+ parts

$0.300

100+ parts

-

1k+ parts

-

10k+ parts

-

78

$0.300

-

-

-

Component Stockers USA

USA . 14,650 parts In-Stock

1+ parts

$0.610

100+ parts

$0.410

1k+ parts

$0.300

10k+ parts

-

14,650

$0.610

$0.410

$0.300

-

Microchip USA

USA . 9,601 parts In-Stock

1+ parts

$5.070

100+ parts

-

1k+ parts

-

10k+ parts

-

9,601

$5.070

-

-

-

Perfect Parts

USA . 45,175 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

45,175

-

-

-

-

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Assy Fe

Spain . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor? Look no further than the ZTX1049A by Diodes Incorporated! With a single NPN configuration and maximum power dissipation of 1W, this transistor is perfect for switching applications. Its matte tin terminal finish ensures durability, while its maximum operating temperature of 200°C guarantees performance in various conditions. Trust Diodes Incorporated to deliver top-notch products like the ZTX1049A that offer exceptional value and benefits to customers across a wide range of industries.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the transistor, making it durable and suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their high efficiency and fast response times.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate this transistor into various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current in electronic circuits.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and placement on PCBs, saving space and facilitating assembly.

Terminal Form: WIRE

Wire terminals provide a secure and reliable connection, ensuring stable operation of the transistor in the circuit.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options, enabling this transistor to be used in a wide range of applications.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1W, this transistor can handle moderate power levels without overheating, increasing its reliability.

Package Style (Meter): IN-LINE

In-line package style offers a compact and streamlined design, making it ideal for space-constrained applications.

Minimum DC Current Gain (hFE): 35

A minimum DC current gain of 35 ensures efficient signal amplification and allows for precise control of the transistor's output.

Maximum Operating Temperature: 200 °C

Capable of operating at temperatures up to 200°C, this transistor can withstand high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 25 V

With a maximum collector-emitter voltage of 25V, this transistor is suitable for low to medium voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon material offers excellent thermal stability and high electron mobility, ensuring reliable performance over a wide range of operating conditions.

Maximum Collector Current (IC): 4 A

Capable of handling a maximum collector current of 4A, this transistor can be used in circuits that require high current switching capabilities.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability in various environments.

Terminal Position: SINGLE

Single terminal position simplifies soldering and assembly process, making it easier to integrate this transistor into electronic circuits.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this transistor can withstand reflow soldering process without damage, ensuring robust assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C allows for reliable soldering of the transistor onto PCBs, ensuring secure electrical connections.

Nominal Transition Frequency (fT): 180 MHz

With a nominal transition frequency of 180MHz, this transistor can switch signals at high speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX1049A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX1049A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20