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ZTX1051A

Diodes Incorporated

ZTX1051A by Diodes Incorporated

ZTX1051A by Diodes Inc. is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 1W, hFE of 45, and operates up to 200°C. With a VCE of 40V and IC of 4A, it offers a transition frequency of 155MHz in an IN-LINE package style.

Median Price

$1.315

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 3,968 parts In-Stock

1+ parts

$1.157

100+ parts

$0.733

1k+ parts

$0.594

10k+ parts

$0.553

3,968

$1.157

$0.733

$0.594

$0.553

Farnell

UK . 3,968 parts In-Stock

1+ parts

$1.290

100+ parts

$0.720

1k+ parts

$0.545

10k+ parts

$0.478

3,968

$1.290

$0.720

$0.545

$0.478

Mouser Electronics

USA . 3,695 parts In-Stock

1+ parts

$1.340

100+ parts

$0.637

1k+ parts

$0.473

10k+ parts

$0.410

3,695

$1.340

$0.637

$0.473

$0.410

DigiKey

USA . 635 parts In-Stock

1+ parts

$1.650

100+ parts

$0.697

1k+ parts

$0.501

10k+ parts

$0.401

635

$1.650

$0.697

$0.501

$0.401

Newark

USA . 2,984 parts In-Stock

1+ parts

$1.840

100+ parts

$0.946

1k+ parts

$0.749

10k+ parts

$0.717

2,984

$1.840

$0.946

$0.749

$0.717

Verical

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.401

16,000

-

-

-

$0.401

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 46,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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46,000

-

-

-

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ABC Electronics Ltd.

UK . 1,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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1,700

-

-

-

-

ComSIT Distribution GmbH

Germany . 1,562 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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1,562

-

-

-

-

Semi Source

USA . 58 parts In-Stock

1+ parts

-

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-

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58

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-

-

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Bristol Electronics

USA . 31 parts In-Stock

1+ parts

-

100+ parts

-

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31

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Atlantic Semiconductor

USA . 31 parts In-Stock

1+ parts

-

100+ parts

-

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-

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31

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 7,393 parts In-Stock

1+ parts

$1.030

100+ parts

$0.660

1k+ parts

$0.460

10k+ parts

-

7,393

$1.030

$0.660

$0.460

-

Continental Prestige Electronics

USA . 2,617 parts In-Stock

1+ parts

$1.050

100+ parts

$0.643

1k+ parts

$0.404

10k+ parts

-

2,617

$1.050

$0.643

$0.404

-

Microchip USA

USA . 6,557 parts In-Stock

1+ parts

$6.890

100+ parts

-

1k+ parts

-

10k+ parts

-

6,557

$6.890

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 17,445 parts In-Stock

1+ parts

-

100+ parts

-

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-

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17,445

-

-

-

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Perfect Parts

USA . 7,083 parts In-Stock

1+ parts

-

100+ parts

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7,083

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-

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Assy Fe

Spain . 68 parts In-Stock

1+ parts

-

100+ parts

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68

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Overview

Unleash the power of the ZTX1051A from Diodes Incorporated, a top-quality Small Signal Bipolar Junction Transistor perfect for amplifiers. With its NPN configuration and impressive 1W power dissipation, this transistor is a game-changer in the industry. Whether you're a hobbyist or a professional, the ZTX1051A offers unmatched performance and reliability. Upgrade your projects with ease knowing you have a product that meets the highest standards of quality and innovation. Take your amplifier designs to the next level with the ZTX1051A - the ultimate choice for discerning customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it versatile for various applications.

Configuration: SINGLE

Simplifies circuit design and implementation, making it easy to use.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in such applications.

Package Shape: RECTANGULAR

Facilitates easy integration into circuit designs, saving space and improving overall layout.

No. of Terminals: 3

Simple and straightforward connection setup, reducing chances of errors during installation.

Maximum Power Dissipation (Abs): 1 W

Can handle a decent amount of power, suitable for small signal amplification tasks.

Maximum Collector-Emitter Voltage: 40 V

Allows for higher voltage operation, expanding the range of potential applications.

Maximum Collector Current (IC): 4 A

Capable of handling relatively high currents, making it suitable for various amplification tasks.

Nominal Transition Frequency (fT): 155 MHz

High transition frequency allows for efficient signal amplification and processing at higher frequencies.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX1051A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

45

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX1051A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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