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ZTX1053ASTOA

Diodes Incorporated

ZTX1053ASTOA by Diodes Incorporated

ZTX1053ASTOA by Diodes Inc. is a NPN BJT transistor with hFE of 100, VCE of 75V, and IC of 3A. Ideal for applications requiring high-speed switching in electronic circuits due to its fT of 140MHz. Package style: cylindrical plastic/epoxy body with wire terminals at the bottom.

Median Price

$0.833

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.833

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650

$0.833

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Vyrian

USA . 1,479 parts In-Stock

1+ parts

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1,479

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 332 parts In-Stock

1+ parts

$5.515

100+ parts

-

1k+ parts

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332

$5.515

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Elevate your electronic designs with the ZTX1053ASTOA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Small Signal Bipolar Junction Transistors that guarantee high performance and reliability. Ideal for a wide range of applications, this NPN transistor offers a maximum Collector-Emitter Voltage of 75V and a minimum DC Current Gain of 100, ensuring optimal functionality in any circuit. Experience the value and benefits of using the ZTX1053ASTOA in your projects, and take your creations to the next level with Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides good insulation and durability, making the transistor reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for signal amplification purposes.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures easy integration into existing circuit layouts.

Package Shape: ROUND

Round package shape allows for efficient heat dissipation and space-saving in compact electronic devices.

Terminal Form: WIRE

Wire terminals facilitate easy and secure connections in circuit designs, ensuring reliable performance.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and enable diverse circuit configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers mechanical strength and easy mounting options, enhancing the overall durability of the transistor.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures consistent and stable amplification of input signals.

Maximum Collector-Emitter Voltage: 75 V

High maximum collector-emitter voltage rating allows for the transistor to handle higher voltage applications without breakdown.

Transistor Element Material: SILICON

Silicon material ensures reliable performance and high temperature tolerance, making the transistor suitable for demanding applications.

Maximum Collector Current (IC): 3 A

High maximum collector current rating allows for the transistor to handle higher current loads, enhancing its versatility.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides good conductivity and solderability, ensuring secure connections in circuit assemblies.

Terminal Position: BOTTOM

Bottom terminal position enables easy mounting and soldering on circuit boards, simplifying the assembly process.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance enables reliable soldering during assembly processes without damaging the transistor.

Nominal Transition Frequency (fT): 140 MHz

High nominal transition frequency indicates the transistor's ability to amplify higher frequency signals accurately, making it suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX1053ASTOA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

75 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX1053ASTOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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