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MBRD835L-T

Diodes Incorporated

MBRD835L-T by Diodes Incorporated

MBRD835L-T by Diodes Inc. is a Schottky rectifier diode with 35V reverse voltage, 8A output current, and 0.41V forward voltage. It is used for efficiency applications at up to 150°C operating temperature in surface mount packages with matte tin finish.

Median Price

$0.197

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.197

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$0.187

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$0.187

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100

$0.197

$0.187

$0.187

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Chip Stock

USA . 3,061 parts In-Stock

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Vyrian

USA . 2,281 parts In-Stock

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2,281

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 70 parts In-Stock

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70

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Prism Electronics

USA . 3 parts In-Stock

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3

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Distributors (Availability)

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Corohmni

South Africa . 146 parts In-Stock

1+ parts

$0.021

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146

$0.021

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Aztec Data Supply Inc.

USA . 2,951 parts In-Stock

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$0.036

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2,951

$0.036

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Decca Corp

Germany . 100 parts In-Stock

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$0.167

100+ parts

$0.164

1k+ parts

$0.162

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100

$0.167

$0.164

$0.162

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Semicontronic

India . 100 parts In-Stock

1+ parts

$0.167

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$0.163

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$0.162

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100

$0.167

$0.163

$0.162

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.197

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$0.187

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$0.187

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100

$0.197

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$0.187

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Ampacity Inc.

Singapore . 100 parts In-Stock

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$0.364

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100

$0.364

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AZTECH Wire

Italy . 360 parts In-Stock

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$13.646

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Component Stockers USA

USA . 263 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,866 parts In-Stock

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Microchip USA

USA . 3,438 parts In-Stock

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3,438

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Argo Parts USA

USA . 1,461 parts In-Stock

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Continental Prestige Electronics

USA . 242 parts In-Stock

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Bastille Electronics

Australia . 15 parts In-Stock

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Perfect Parts

USA . 3 parts In-Stock

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Overview

When it comes to efficient power management solutions, look no further than the MBRD835L-T by Diodes Incorporated. This high-quality Schottky rectifier diode offers customers unparalleled performance and reliability. With a maximum output current of 8A and a peak repetitive peak reverse voltage of 35V, this product is ideal for applications where efficiency is key. Whether you're working on consumer electronics, industrial equipment, or automotive systems, the MBRD835L-T is sure to meet your needs. Trust in Diodes Incorporated for cutting-edge technology that delivers value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good protection for the diode and ensures durability in various environments.

Surface Mount: YES

Ease of installation and space-saving design for compact electronic devices.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, enhancing reliability and performance.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop, fast switching speed, and high efficiency, making them suitable for high-frequency applications.

Maximum Output Current: 8 A

Capable of handling higher currents for power applications.

Technical Specifications

Diodes & Rectifiers MBRD835L-T attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

LOW POWER LOSS, FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.41 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBRD835L-T Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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