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FZT591TA

Diodes Incorporated

FZT591TA by Diodes Incorporated

FZT591TA by Diodes Inc. is a PNP BJT transistor with 4 terminals, capable of handling up to 1A collector current and 3W power dissipation. Ideal for switching applications, it operates at temperatures up to 150°C with a max VCE of 60V and transition frequency of 150MHz.

Median Price

$0.663

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 800 parts In-Stock

1+ parts

$0.663

100+ parts

$0.406

1k+ parts

$0.317

10k+ parts

-

800

$0.663

$0.406

$0.317

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Farnell

UK . 800 parts In-Stock

1+ parts

$0.729

100+ parts

$0.391

1k+ parts

$0.297

10k+ parts

$0.269

800

$0.729

$0.391

$0.297

$0.269

Newark

USA . 767 parts In-Stock

1+ parts

$1.180

100+ parts

$0.482

1k+ parts

$0.325

10k+ parts

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767

$1.180

$0.482

$0.325

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Mouser Electronics

USA . 78 parts In-Stock

1+ parts

$1.360

100+ parts

$0.553

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-

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78

$1.360

$0.553

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Verical

USA . 49,000 parts In-Stock

1+ parts

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$0.212

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49,000

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$0.212

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Future Electronics

Canada . 7,000 parts In-Stock

1+ parts

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100+ parts

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$0.315

10k+ parts

$0.300

7,000

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-

$0.315

$0.300

Arrow

USA . 500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.297

10k+ parts

$0.254

500

-

-

$0.297

$0.254

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 45 parts In-Stock

1+ parts

$0.266

100+ parts

-

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45

$0.266

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Chip Stock

USA . 28,000 parts In-Stock

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28,000

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Vyrian

USA . 8,255 parts In-Stock

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8,255

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IBS Electronics

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.505

10k+ parts

$0.421

7,000

-

-

$0.505

$0.421

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.630

10k+ parts

$0.573

6,000

-

-

$0.630

$0.573

Bristol Electronics

USA . 5,357 parts In-Stock

1+ parts

-

100+ parts

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5,357

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 4,266 parts In-Stock

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4,266

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Atlantic Semiconductor

USA . 1,853 parts In-Stock

1+ parts

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1,853

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Cyclops Electronics Ltd

UK . 1,430 parts In-Stock

1+ parts

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1,430

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Diverse Electronics

Canada . 1,000 parts In-Stock

1+ parts

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1,000

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ACDS - Activité Composants Distribution Service

France . 839 parts In-Stock

1+ parts

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839

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PC Components Company LLC

USA . 426 parts In-Stock

1+ parts

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426

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Prism Electronics

USA . 300 parts In-Stock

1+ parts

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300

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Lantek

USA . 296 parts In-Stock

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296

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Sensible Micro Corp

USA . 286 parts In-Stock

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286

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 8,425 parts In-Stock

1+ parts

$0.180

100+ parts

-

1k+ parts

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8,425

$0.180

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.266

100+ parts

-

1k+ parts

$0.253

10k+ parts

$0.248

2,000

$0.266

-

$0.253

$0.248

Lixinc

USA . 12,860 parts In-Stock

1+ parts

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12,860

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Perfect Parts

USA . 9,082 parts In-Stock

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9,082

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Cyclops Electronics Ltd (Excess)

UK . 2,839 parts In-Stock

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2,839

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Continental Prestige Electronics

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$0.397

1k+ parts

$0.227

10k+ parts

$0.213

1,000

-

$0.397

$0.227

$0.213

Eastek

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.330

10k+ parts

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1,000

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$0.330

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iodParts Technologies Inc.

India . 895 parts In-Stock

1+ parts

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895

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Glotronic Ltd.

UK . 671 parts In-Stock

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671

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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GreenTree Electronics

Israel . 296 parts In-Stock

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296

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Overview

Elevate your electronic designs with the FZT591TA from Diodes Incorporated, a leading manufacturer known for top-quality components. As a power Bipolar Junction Transistor, this PNP transistor is ideal for switching applications, offering efficient performance and reliability. With a maximum collector-emitter voltage of 60V and a maximum operating temperature of 150°C, this transistor delivers exceptional power dissipation of 3W. Its small outline package makes it perfect for space-constrained designs. Trust the FZT591TA to enhance your projects with its superior functionality and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

Offers versatility in circuit designs and allows for a wide range of applications.

Configuration: SINGLE

Simplifies circuit design and saves space, making it a convenient choice for compact electronic devices.

Transistor Application: SWITCHING

Ensures efficient performance in switching applications, making it ideal for power control circuits.

Surface Mount: YES

Facilitates easy and secure installation on PCBs, enhancing the overall reliability of the product.

Package Shape: RECTANGULAR

Allows for efficient use of space on the PCB and simplifies the assembly process.

Terminal Form: GULL WING

Simplifies soldering and provides a strong mechanical connection, ensuring reliability in operation.

No. of Terminals: 4

Provides necessary connectivity options for different circuit configurations, adding flexibility to the design.

Maximum Power Dissipation: 3 W

Withstands high power levels, ensuring stable operation under varying load conditions.

Package Style (Meter): SMALL OUTLINE

Contributes to a compact design and allows for efficient heat dissipation, enhancing overall performance.

Minimum DC Current Gain (hFE): 15

Ensures consistent and reliable amplification of current in the circuit, improving overall signal integrity.

Maximum Operating Temperature: 150 °C

Enables operation in a wide temperature range, making it suitable for various industrial applications.

Maximum Collector-Emitter Voltage: 60 V

Provides a high voltage tolerance, ensuring safe and reliable operation in demanding conditions.

Transistor Element Material: SILICON

Offers high performance and durability, making the transistor a reliable choice for long-term use.

Maximum Collector Current (IC): 1 A

Allows for handling high current loads, making it suitable for power distribution applications.

Terminal Finish: MATTE TIN

Enhances solderability and corrosion resistance, ensuring long-term reliability in various environments.

Terminal Position: DUAL

Provides flexibility in PCB layout and simplifies the connection of external components, contributing to ease of use.

Case Connection: COLLECTOR

Simplifies circuit design and ensures efficient current flow, enhancing the overall performance.

Peak Reflow Temperature °C: 260

Withstands high-temperature soldering processes, ensuring reliable connections during assembly.

Nominal Transition Frequency (fT): 150 MHz

Enables high-speed switching and amplification, making the transistor suitable for demanding applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT591TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT591TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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