Loading...

FZT589TA

Diodes Incorporated

FZT589TA by Diodes Incorporated

FZT589TA by Diodes Inc. is a PNP BJT transistor with max. VCE of 30V, IC of 1A, and hFE of 40. Ideal for small outline applications requiring high transition frequency up to 100MHz in a surface-mount package with Gull Wing terminals.

Median Price

$0.511

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,004 parts In-Stock

1+ parts

$0.810

100+ parts

$0.387

1k+ parts

$0.304

10k+ parts

$0.232

1,004

$0.810

$0.387

$0.304

$0.232

Verical

USA . 26,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.212

10k+ parts

-

26,000

-

-

$0.212

-

Avnet

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Dan-Mar Components

USA . 3,851 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,851

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Bristol Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.414

1k+ parts

$0.178

10k+ parts

-

2,000

-

$0.414

$0.178

-

LIBRA Elektronik GmbH

Germany . 1,091 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,091

-

-

-

-

NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 421 parts In-Stock

1+ parts

$0.603

100+ parts

-

1k+ parts

-

10k+ parts

-

421

$0.603

-

-

-

Component Stockers USA

USA . 18,348 parts In-Stock

1+ parts

$0.630

100+ parts

$0.380

1k+ parts

$0.210

10k+ parts

$0.210

18,348

$0.630

$0.380

$0.210

$0.210

Northwest PG Solutions

USA . 2,286 parts In-Stock

1+ parts

$0.663

100+ parts

-

1k+ parts

-

10k+ parts

-

2,286

$0.663

-

-

-

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90,000

-

-

-

-

Lixinc

USA . 7,779 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,779

-

-

-

-

Perfect Parts

USA . 7,596 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,596

-

-

-

-

Kepictronics

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.314

10k+ parts

-

1,000

-

-

$0.314

-

Overview

Experience the power of innovation with the FZT589TA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Power Bipolar Junction Transistors for a wide range of applications. The FZT589TA offers customers unmatched value and benefits, providing reliable performance and efficiency. Say goodbye to technical headaches and hello to seamless functionality with this PNP transistor. Upgrade your electronics with Diodes Incorporated today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a sturdy and durable housing for the transistor, ensuring longevity and reliability in various applications.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in design and compatibility with specific circuit requirements.

Configuration: SINGLE

Simplified and straightforward design makes it easy to incorporate into circuits, reducing complexity and potential errors.

Surface Mount: YES

Facilitates easy and efficient mounting onto PCBs, saving space and enabling automated assembly processes.

Package Shape: RECTANGULAR

Optimal shape for efficient placement and layout on PCBs, contributing to better thermal management and signal integrity.

Minimum DC Current Gain (hFE): 40

High current gain ensures reliable amplification and switching performance in various applications, offering stable and predictable operation.

Maximum Collector-Emitter Voltage: 30 V

Provides a suitable voltage rating for many low to medium power applications, enhancing compatibility and simplifying circuit design.

Transistor Element Material: SILICON

Silicon-based construction offers dependable performance, temperature stability, and efficiency, making it a widely used material in semiconductor devices.

Maximum Collector Current (IC): 1 A

Adequate current-carrying capability for various applications, ensuring optimal performance and reliability under specified operating conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable electrical connections and long-term durability.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables faster switching speeds and better high-frequency performance, suitable for applications requiring high-speed operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT589TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT589TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20