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FZT549TA

Diodes Incorporated

FZT549TA by Diodes Incorporated

FZT549TA by Diodes Inc. is a PNP BJT transistor with 4 terminals, capable of handling up to 1A collector current and 30V collector-emitter voltage. It is designed for switching applications, featuring a min DC current gain of 70 and a transition frequency of 100MHz. The package style is small outline, making it suitable for surface mount configurations in various electronic devices.

Median Price

$0.445

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1,003 parts In-Stock

1+ parts

$0.332

100+ parts

$0.308

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$0.230

10k+ parts

$0.218

1,003

$0.332

$0.308

$0.230

$0.218

Farnell

UK . 663 parts In-Stock

1+ parts

$0.369

100+ parts

$0.259

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$0.218

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$0.200

663

$0.369

$0.259

$0.218

$0.200

Newark

USA . 661 parts In-Stock

1+ parts

$0.445

100+ parts

$0.394

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$0.268

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661

$0.445

$0.394

$0.268

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Element14

Singapore . 688 parts In-Stock

1+ parts

$0.474

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$0.332

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$0.317

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688

$0.474

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$0.317

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Mouser Electronics

USA . 5,288 parts In-Stock

1+ parts

$1.220

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$0.452

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$0.309

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$0.265

5,288

$1.220

$0.452

$0.309

$0.265

DigiKey

USA . 2,077 parts In-Stock

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$1.220

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$0.503

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$0.390

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2,077

$1.220

$0.503

$0.390

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Verical

USA . 9,000 parts In-Stock

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$0.274

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9,000

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Avnet

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Chip Stock

USA . 77,000 parts In-Stock

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Flip Electronics

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NAC Semi

USA . 1,000 parts In-Stock

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Bristol Electronics

USA . 581 parts In-Stock

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581

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Inventory MP

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486

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 316 parts In-Stock

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316

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Connector Distribution Corp

USA . 250 parts In-Stock

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250

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Right Parts Inc.

USA . 250 parts In-Stock

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250

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Atlantic Semiconductor

USA . 95 parts In-Stock

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Ampacity Inc.

Singapore . 12,863 parts In-Stock

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$0.368

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12,863

$0.368

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Continental Prestige Electronics

USA . 690 parts In-Stock

1+ parts

$0.675

100+ parts

$0.397

1k+ parts

$0.227

10k+ parts

$0.213

690

$0.675

$0.397

$0.227

$0.213

Perfect Parts

USA . 57,269 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

USA . 11,142 parts In-Stock

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Northwest PG Solutions

USA . 1,330 parts In-Stock

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Metaverse IC Inc.

Canada . 1,100 parts In-Stock

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Eastek

USA . 1,000 parts In-Stock

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$0.330

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Native Components

USA . 594 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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Overview

Unleash the power of innovation with the FZT549TA by Diodes Incorporated. This high-quality Power Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability for all your switching needs. With its PNP configuration and maximum collector-emitter voltage of 30V, this transistor is perfect for a wide range of applications. Trust in Diodes Incorporated to deliver top-notch products that exceed expectations. Upgrade your projects today with the FZT549TA and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and helps in protecting the internal components of the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: PNP

The PNP polarity of the transistor allows for easy integration into circuits and provides flexibility in designing switching applications.

Configuration: SINGLE

The single configuration simplifies the circuit design process and makes it easy to use in various switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient and reliable performance in controlling the flow of current.

Surface Mount: YES

Being surface mountable, this transistor is easy to solder onto PCBs, saving space and simplifying the assembly process.

Maximum Collector-Emitter Voltage: 30 V

With a high maximum collector-emitter voltage rating, this transistor can handle higher voltages, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 1 A

The high collector current rating allows this transistor to handle larger currents, making it suitable for high-power switching applications.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency ensures fast switching speeds, making this transistor ideal for applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT549TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT549TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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