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DMC3028LSD-13

Diodes Incorporated

DMC3028LSD-13 by Diodes Incorporated

DMC3028LSD-13 by Diodes Inc. is a Small Signal FET with N/P-channel types, 2 elements with built-in diode for switching applications. Features include 30V DS breakdown voltage, 7.4A max drain current, and 0.028 ohm max on resistance. Ideal for enhancement mode operation in surface mount designs at up to 150°C operating temperature.

Median Price

$0.360

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 92 parts In-Stock

1+ parts

$0.360

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$0.360

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$0.360

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92

$0.360

$0.360

$0.360

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DigiKey

USA . 41 parts In-Stock

1+ parts

$0.960

100+ parts

$0.390

1k+ parts

$0.270

10k+ parts

$0.208

41

$0.960

$0.390

$0.270

$0.208

Mouser Electronics

USA . 1,177 parts In-Stock

1+ parts

$1.100

100+ parts

$0.469

1k+ parts

$0.292

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$0.208

1,177

$1.100

$0.469

$0.292

$0.208

Verical

USA . 10,000 parts In-Stock

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$0.234

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$0.234

Arrow

USA . 699 parts In-Stock

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$0.148

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699

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$0.148

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Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$0.353

100+ parts

-

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10

$0.353

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TME

Poland . 2,156 parts In-Stock

1+ parts

$0.780

100+ parts

$0.323

1k+ parts

$0.220

10k+ parts

$0.211

2,156

$0.780

$0.323

$0.220

$0.211

Vyrian

USA . 25,235 parts In-Stock

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NAC Semi

USA . 5,000 parts In-Stock

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$0.336

5,000

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$0.336

ComSIT USA

USA . 3,785 parts In-Stock

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3,785

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Classic Components Corporation

USA . 3,326 parts In-Stock

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3,326

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IBS Electronics

USA . 2,500 parts In-Stock

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$0.330

2,500

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$0.330

Bristol Electronics

USA . 2,388 parts In-Stock

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2,388

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ComSIT Distribution GmbH

Germany . 1,285 parts In-Stock

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1,285

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Flip Electronics

USA . 400 parts In-Stock

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400

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Ashlea Components Ltd

UK . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 22,836 parts In-Stock

1+ parts

$0.126

100+ parts

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22,836

$0.126

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.353

100+ parts

$0.346

1k+ parts

$0.335

10k+ parts

$0.328

2,000

$0.353

$0.346

$0.335

$0.328

Continental Prestige Electronics

USA . 722 parts In-Stock

1+ parts

$0.353

100+ parts

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$0.346

722

$0.353

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-

$0.346

Argo Parts USA

USA . 507 parts In-Stock

1+ parts

$0.353

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$0.342

507

$0.353

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$0.342

Advanced Electronics

New Zealand . 92 parts In-Stock

1+ parts

$0.360

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$0.360

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$0.360

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92

$0.360

$0.360

$0.360

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Component Stockers USA

USA . 50,235 parts In-Stock

1+ parts

$0.530

100+ parts

$0.250

1k+ parts

$0.140

10k+ parts

$0.160

50,235

$0.530

$0.250

$0.140

$0.160

Corohmni

South Africa . 485 parts In-Stock

1+ parts

$1.407

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485

$1.407

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Aztec Data Supply Inc.

USA . 324 parts In-Stock

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$1.820

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324

$1.820

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RC Electronics

USA . 58,978 parts In-Stock

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$0.240

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$0.220

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$0.210

58,978

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$0.210

Perfect Parts

USA . 51,238 parts In-Stock

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Kepictronics

USA . 18,985 parts In-Stock

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Lixinc

USA . 5,418 parts In-Stock

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iodParts Technologies Inc.

India . 3,230 parts In-Stock

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Eastek

USA . 2,500 parts In-Stock

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$0.220

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2,500

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$0.220

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Assy Fe

Spain . 1,000 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Discover the superior performance and reliability of the DMC3028LSD-13 by Diodes Incorporated, a leading manufacturer in the industry. This small signal field effect transistor boasts N-channel and P-channel configuration with built-in diode elements, making it ideal for switching applications. With a high maximum drain current of 7.4A and low on-resistance of 0.028 ohm, this transistor offers unmatched efficiency and power handling capabilities. Trust Diodes Incorporated to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Offers versatility for different circuit requirements and applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Enhances functionality by having multiple elements and a built-in diode for better performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it efficient and effective in controlling electrical signals.

Minimum DS Breakdown Voltage: 30 V

Can withstand higher voltages, providing a safety margin for various circuit designs.

Surface Mount: YES

Allows for easy and convenient placement on circuit boards, saving space and simplifying the assembly process.

Maximum Drain Current (Abs) (ID): 7.4 A

Capable of handling high currents, making it suitable for demanding applications.

Maximum Power Dissipation (Abs): 2.1 W

Can dissipate heat efficiently, ensuring stable operation under high power conditions.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial environments.

Maximum Drain-Source On Resistance: 0.028 ohm

Low on-resistance reduces power loss and improves efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC3028LSD-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

7.4 A

Maximum Drain Current (ID):

5.5 A

Maximum Drain-Source On Resistance:

.028 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC3028LSD-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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