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DMC3060LVT-7

Diodes Incorporated

DMC3060LVT-7 by Diodes Incorporated

DMC3060LVT-7 by Diodes Inc. is a Small Signal FET with N/P-channel, 2 elements in separate configuration for switching applications. It features a min DS breakdown voltage of 30V, max drain current of 3.6A, and max operating temp of 150°C. With surface mount capability and low on-resistance at 0.06 ohm, it's ideal for compact electronic designs requiring efficient power management.

Median Price

$0.382

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,455 parts In-Stock

1+ parts

$0.620

100+ parts

$0.244

1k+ parts

$0.164

10k+ parts

$0.118

4,455

$0.620

$0.244

$0.164

$0.118

DigiKey

USA . 2,211 parts In-Stock

1+ parts

$0.660

100+ parts

$0.261

1k+ parts

$0.177

10k+ parts

$0.131

2,211

$0.660

$0.261

$0.177

$0.131

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.114

6,000

-

-

-

$0.114

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

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3,000

-

-

-

-

RS (Exports)

UK . 2,150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.143

2,150

-

-

-

$0.143

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Greenchips

USA . 11,140 parts In-Stock

1+ parts

$0.146

100+ parts

$0.139

1k+ parts

$0.133

10k+ parts

$0.119

11,140

$0.146

$0.139

$0.133

$0.119

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.155

100+ parts

-

1k+ parts

-

10k+ parts

-

900

$0.155

-

-

-

Vyrian

USA . 72,467 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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72,467

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-

-

-

IBS Electronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.379

9,000

-

-

-

$0.379

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.500

6,000

-

-

-

$0.500

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 74,518 parts In-Stock

1+ parts

$0.087

100+ parts

$0.085

1k+ parts

$0.084

10k+ parts

-

74,518

$0.087

$0.085

$0.084

-

Ampacity Inc.

Singapore . 72,117 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

-

72,117

$0.087

-

-

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.152

100+ parts

-

1k+ parts

$0.146

10k+ parts

-

50

$0.152

-

$0.146

-

Argo Parts USA

USA . 2,126 parts In-Stock

1+ parts

$0.155

100+ parts

-

1k+ parts

-

10k+ parts

$0.150

2,126

$0.155

-

-

$0.150

Continental Prestige Electronics

USA . 530 parts In-Stock

1+ parts

$0.155

100+ parts

-

1k+ parts

-

10k+ parts

$0.152

530

$0.155

-

-

$0.152

Aztec Data Supply Inc.

USA . 3,863 parts In-Stock

1+ parts

$1.470

100+ parts

-

1k+ parts

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10k+ parts

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3,863

$1.470

-

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Corohmni

South Africa . 441 parts In-Stock

1+ parts

$1.768

100+ parts

-

1k+ parts

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10k+ parts

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441

$1.768

-

-

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Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.130

10k+ parts

-

3,000

-

-

$0.130

-

iodParts Technologies Inc.

India . 2,925 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,925

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Overview

The DMC3060LVT-7 by Diodes Incorporated is a top-quality Small Signal Field Effect Transistor designed for switching applications. With a maximum drain current of 3.6 A and a low on-resistance of 0.06 ohm, this transistor offers exceptional performance and reliability. Diodes Incorporated, known for its cutting-edge technology and commitment to excellence, ensures that this N-Channel and P-Channel transistor meets the highest industry standards. Whether you're looking for efficiency, power, or versatility, the DMC3060LVT-7 delivers it all. Upgrade your electronics with this high-value component today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, increasing its lifespan and reliability.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for versatile applications and compatibility with different circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS

The separate configuration with 2 elements allows for more precise control and flexibility in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and efficient operation.

Maximum Drain Current (ID): 3.6 A

High maximum drain current allows for handling of larger loads and increased performance capabilities.

Maximum Drain-Source On Resistance: 0.06 ohm

Low on-resistance results in minimal power loss and efficient operation of the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC3060LVT-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

3.6 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC3060LVT-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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