Loading...

DMC3028LSDX-13

Diodes Incorporated

DMC3028LSDX-13 by Diodes Incorporated

DMC3028LSDX-13 by Diodes Inc. is a Small Signal FET with N/P-channel types, suitable for switching applications. It features 30V DS breakdown voltage, 5.8A max drain current, and 0.027ohm max on-resistance. With a package style of small outline and operating temp up to 150°C, it's ideal for automotive electronics under AEC-Q101 standard.

Median Price

$0.375

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,810 parts In-Stock

1+ parts

$1.040

100+ parts

$0.424

1k+ parts

$0.297

10k+ parts

-

1,810

$1.040

$0.424

$0.297

-

DigiKey

USA . 2,164 parts In-Stock

1+ parts

$1.200

100+ parts

$0.493

1k+ parts

$0.346

10k+ parts

$0.271

2,164

$1.200

$0.493

$0.346

$0.271

Mouser Electronics

USA . 1,724 parts In-Stock

1+ parts

$1.200

100+ parts

$0.493

1k+ parts

$0.346

10k+ parts

$0.270

1,724

$1.200

$0.493

$0.346

$0.270

Arrow

USA . 35,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.186

35,000

-

-

-

$0.186

Verical

USA . 35,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.183

35,000

-

-

-

$0.183

Avnet

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Element14

Singapore . 2,470 parts In-Stock

1+ parts

-

100+ parts

$0.375

1k+ parts

$0.272

10k+ parts

$0.271

2,470

-

$0.375

$0.272

$0.271

Farnell

UK . 2,440 parts In-Stock

1+ parts

-

100+ parts

$0.328

1k+ parts

$0.208

10k+ parts

$0.207

2,440

-

$0.328

$0.208

$0.207

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.533

15,000

-

-

-

$0.533

NAC Semi

USA . 12,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.780

12,500

-

-

-

$0.780

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 745 parts In-Stock

1+ parts

$85.760

100+ parts

-

1k+ parts

-

10k+ parts

$82.330

745

$85.760

-

-

$82.330

Northwest PG Solutions

USA . 1,657 parts In-Stock

1+ parts

$94.336

100+ parts

-

1k+ parts

-

10k+ parts

-

1,657

$94.336

-

-

-

Lixinc

USA . 19,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,250

-

-

-

-

Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Eastek

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Overview

Unlock the power of cutting-edge technology with the DMC3028LSDX-13 by Diodes Incorporated. As a leader in the industry, Diodes Incorporated delivers top-quality Small Signal Field Effect Transistors (FET) like the DMC3028LSDX-13, perfect for switching applications. With its N-CHANNEL and P-CHANNEL configuration and separate 2-element design with built-in diode, this transistor offers unparalleled performance and reliability. Experience enhanced efficiency and superior functionality with this advanced semiconductor device. Elevate your projects to new heights with the DMC3028LSDX-13 from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package provides good insulation and protection for the internal components of the FET, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for versatility in different circuit configurations and applications, providing flexibility for various design requirements.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with 2 elements and built-in diode simplifies circuit design and can help in reducing component count and overall cost.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET is optimized for fast switching speeds and efficient operation in switching circuits.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltage levels safely, making it suitable for a wide range of applications.

Surface Mount: YES

Being surface mount compatible makes it easier to integrate this FET into compact PCB designs, saving space and simplifying assembly.

Maximum Drain Current (Abs) (ID): 5.8 A

Capable of handling a maximum drain current of 5.8A ensures reliable performance under high load conditions, making it suitable for demanding applications.

Maximum Power Dissipation (Abs): 1.5 W

The maximum power dissipation of 1.5W indicates the heat handling capability of the FET, allowing for continuous operation without overheating.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can operate in high-temperature environments without performance degradation, increasing its reliability.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC3028LSDX-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

5.8 A

Maximum Drain Current (ID):

5.5 A

Maximum Drain-Source On Resistance:

.027 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC3028LSDX-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19