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DMC3730UFL3-7

Diodes Incorporated

DMC3730UFL3-7 by Diodes Incorporated

Diodes Inc. DMC3730UFL3-7 is a Small Signal FET with N/P-channel, 2 elements, built-in diode for switching applications. Features include 30V DS breakdown voltage, 1.1A max drain current, and -55 to 150°C operating temp range. Ideal for AEC-Q101 compliant designs requiring high power dissipation in compact SOT package.

Median Price

$0.364

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,695 parts In-Stock

1+ parts

$0.449

100+ parts

$0.202

1k+ parts

$0.119

10k+ parts

-

1,695

$0.449

$0.202

$0.119

-

Mouser Electronics

USA . 3,932 parts In-Stock

1+ parts

$0.490

100+ parts

$0.193

1k+ parts

$0.130

10k+ parts

$0.093

3,932

$0.490

$0.193

$0.130

$0.093

DigiKey

USA . 3,518 parts In-Stock

1+ parts

$0.530

100+ parts

$0.206

1k+ parts

$0.138

10k+ parts

$0.101

3,518

$0.530

$0.206

$0.138

$0.101

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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3,000

-

-

-

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Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.089

3,000

-

-

-

$0.089

Farnell

UK . 1,795 parts In-Stock

1+ parts

-

100+ parts

$0.164

1k+ parts

$0.110

10k+ parts

$0.090

1,795

-

$0.164

$0.110

$0.090

Element14

Singapore . 1,795 parts In-Stock

1+ parts

-

100+ parts

$0.280

1k+ parts

$0.154

10k+ parts

$0.133

1,795

-

$0.280

$0.154

$0.133

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 91,500 parts In-Stock

1+ parts

-

100+ parts

-

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91,500

-

-

-

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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3,000

-

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ComSIT Distribution GmbH

Germany . 42 parts In-Stock

1+ parts

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42

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 14,433 parts In-Stock

1+ parts

$0.064

100+ parts

-

1k+ parts

-

10k+ parts

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14,433

$0.064

-

-

-

Continental Prestige Electronics

USA . 2,790 parts In-Stock

1+ parts

$0.455

100+ parts

$0.185

1k+ parts

$0.098

10k+ parts

$0.083

2,790

$0.455

$0.185

$0.098

$0.083

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.505

100+ parts

$0.460

1k+ parts

$0.414

10k+ parts

-

20

$0.505

$0.460

$0.414

-

Corohmni

South Africa . 287 parts In-Stock

1+ parts

$1.763

100+ parts

-

1k+ parts

-

10k+ parts

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287

$1.763

-

-

-

Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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8,000

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Eastek

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.100

10k+ parts

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6,000

-

-

$0.100

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Argo Parts USA

USA . 4,493 parts In-Stock

1+ parts

-

100+ parts

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4,493

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Aranea Global

USA . 500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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500

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Overview

Enhance your electronic designs with the DMC3730UFL3-7 by Diodes Incorporated, a high-quality small signal field effect transistor perfect for switching applications. Manufactured with precision and expertise, this N-channel and P-channel transistor offers superior performance and reliability. With a maximum power dissipation of 0.81 W and a minimal drain-source on resistance of 1 ohm, this transistor provides exceptional value and efficiency. Whether you're working on automotive electronics or industrial controls, the DMC3730UFL3-7 is the perfect choice for your next project. Experience the benefits of Diodes Incorporated's advanced technology and elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Offers versatility in circuit design as both N-channel and P-channel transistors are included in the package.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient performance in turning circuits on and off.

Surface Mount: YES

Allows for easy and compact mounting on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 30 V

Withstands higher voltages, ensuring reliable operation in different voltage conditions.

Maximum Power Dissipation (Abs): 0.81 W

Can dissipate a significant amount of power, making it suitable for applications that require high power handling capacity.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, making it suitable for use in environments with elevated temperatures.

Maximum Drain Current (ID): 1.1 A

With a high drain current capacity, the transistor can handle larger current flows without overheating.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC3730UFL3-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

1.1 A

Maximum Drain-Source On Resistance:

1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4.3 pF

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC3730UFL3-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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