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DMC3028LSDXQ-13

Diodes Incorporated

DMC3028LSDXQ-13 by Diodes Incorporated

DMC3028LSDXQ-13 by Diodes Inc. is a Small Signal FET with N/P-channel, 2 elements, built-in diode for switching applications. Features include 30V DS breakdown voltage, 0.027 ohm RDS(on), and 5.5A ID max current. Ideal for enhancement mode operation in automotive electronics meeting AEC-Q101 standards.

Median Price

$0.838

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,977 parts In-Stock

1+ parts

$1.070

100+ parts

$0.526

1k+ parts

$0.425

10k+ parts

-

1,977

$1.070

$0.526

$0.425

-

Mouser Electronics

USA . 7,726 parts In-Stock

1+ parts

$1.240

100+ parts

$0.516

1k+ parts

$0.363

10k+ parts

$0.285

7,726

$1.240

$0.516

$0.363

$0.285

DigiKey

USA . 16,107 parts In-Stock

1+ parts

$1.250

100+ parts

$0.515

1k+ parts

$0.363

10k+ parts

$0.285

16,107

$1.250

$0.515

$0.363

$0.285

Verical

USA . 52,500 parts In-Stock

1+ parts

-

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$0.249

52,500

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-

$0.249

Farnell

UK . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.402

1k+ parts

$0.221

10k+ parts

$0.217

2,500

-

$0.402

$0.221

$0.217

Element14

Singapore . 1,977 parts In-Stock

1+ parts

-

100+ parts

$0.606

1k+ parts

$0.371

10k+ parts

$0.368

1,977

-

$0.606

$0.371

$0.368

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rutronik

Germany . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.211

7,500

-

-

-

$0.211

SPM Sales

USA . 5,000 parts In-Stock

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5,000

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Classic Components Corporation

USA . 1,965 parts In-Stock

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1,965

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,407 parts In-Stock

1+ parts

$0.212

100+ parts

-

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9,407

$0.212

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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GreenTree Electronics

Israel . 40,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,160 parts In-Stock

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7,160

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Eastek

USA . 2,500 parts In-Stock

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2,500

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Native Components

USA . 944 parts In-Stock

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944

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Northwest PG Solutions

USA . 156 parts In-Stock

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156

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Overview

Unlock the power of innovation with the DMC3028LSDXQ-13 by Diodes Incorporated. As a leader in small signal Field Effect Transistors, Diodes Incorporated sets the standard for quality and reliability. Perfect for switching applications, this transistor offers enhanced performance and efficiency. With a minimum DS breakdown voltage of 30V and maximum drain current of 5.5A, this product delivers unmatched value to customers seeking cutting-edge solutions. Trust Diodes Incorporated to provide top-of-the-line technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging makes the transistor lightweight and resistant to moisture and corrosion, increasing its durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for versatile circuit design and compatibility with different applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with built-in diode enhances circuit performance and efficiency, making the transistor suitable for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast response times and efficient performance in electronic circuits.

Surface Mount: YES

Surface mount capability makes it easy to integrate the transistor onto PCBs, saving space and simplifying the manufacturing process.

Minimum DS Breakdown Voltage: 30 V

With a high minimum breakdown voltage, this transistor can handle higher voltages, providing additional protection and reliability in circuits.

Maximum Drain Current (ID): 5.5 A

Capable of handling high drain currents, allowing for efficient power management and operation in a wide range of applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC3028LSDXQ-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

5.5 A

Maximum Drain-Source On Resistance:

.027 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC3028LSDXQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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