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BSR43TA

Diodes Incorporated

BSR43TA by Diodes Incorporated

Diodes Inc. BSR43TA is a NPN BJT transistor with max. Vce of 80V, Ic of 1A, and hFE of 50. Ideal for switching applications due to fast ton of 250ns and toff of 1000ns. Packaged in small outline with matte tin finish for surface mount assembly.

Median Price

$0.161

Lifecycle Status

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19

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1k+

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Arrow

USA . 6 parts In-Stock

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$0.109

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Adafruit Industries

USA . 93 parts In-Stock

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$0.155

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$0.155

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$0.155

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$0.155

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Mouser Electronics

USA . 46 parts In-Stock

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$0.860

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$0.283

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$0.192

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46

$0.860

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Verical

USA . 7,000 parts In-Stock

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$0.167

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$0.118

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Nova Conductors

Japan . 300 parts In-Stock

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NAC Semi

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Chip Stock

USA . 41,000 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 36,172 parts In-Stock

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Vyrian

USA . 4,131 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,000 parts In-Stock

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ComSIT USA

USA . 4,000 parts In-Stock

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Semi Source

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.238

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$0.180

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Extreme Components

USA . 1,000 parts In-Stock

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Prism Electronics

USA . 1,000 parts In-Stock

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Bristol Electronics

USA . 871 parts In-Stock

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Pegasus Components GmbH

Germany . 421 parts In-Stock

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North Shore Components

USA . 353 parts In-Stock

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Mil-Aero Solutions, Inc.

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AZTECH Wire

Italy . 7,969 parts In-Stock

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$0.150

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Argo Parts USA

USA . 3,148 parts In-Stock

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$0.152

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Continental Prestige Electronics

USA . 2,982 parts In-Stock

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$0.152

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$0.149

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Advanced Electronics

New Zealand . 93 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.168

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Corohmni

South Africa . 848 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,942 parts In-Stock

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$0.808

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GreenTree Electronics

Israel . 290,000 parts In-Stock

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Eastek

USA . 283,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

USA . 26,409 parts In-Stock

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iodParts Technologies Inc.

India . 15,670 parts In-Stock

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Lixinc

USA . 13,687 parts In-Stock

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Authorized Procurement Solutions

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S.R.D Solutions

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Supply Digital

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Overview

Discover the superior performance and reliability of the BSR43TA small signal bipolar junction transistor by Diodes Incorporated. Designed with precision and innovation, this NPN transistor is perfect for various switching applications. With a high DC current gain and maximum collector-emitter voltage, this transistor offers exceptional efficiency and durability. Whether you're in the automotive, consumer electronics, or industrial sectors, the BSR43TA provides unmatched value and quality that will take your designs to the next level. Experience the difference with Diodes Incorporated today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier and switching circuits, offering versatility in applications.

Configuration: SINGLE

Simplifies circuit design and makes it easy to use in single transistor setups.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds are required, such as in power supplies or motor control.

Surface Mount: YES

Enables easy and efficient installation on PCBs, saving space and simplifying manufacturing processes.

Nominal Transition Frequency (fT): 100 MHz

Provides high-frequency operation capabilities, making it suitable for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSR43TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1000 ns

Maximum Turn On Time (ton):

250 ns

Trade Compliance

BSR43TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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