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BSR43

Diodes Incorporated

BSR43 by Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

Median Price

$0.117

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Freelance Electronics

USA . 1,331 parts In-Stock

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$0.117

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$0.123

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Vyrian

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Digiode

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Anansix

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PC Components Company LLC

USA . 4,000 parts In-Stock

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Bristol Electronics

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R&J Components

USA . 2,995 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1,959 parts In-Stock

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Dan-Mar Components

USA . 1,685 parts In-Stock

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Atlantic Semiconductor

USA . 1,072 parts In-Stock

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ComSIT Distribution GmbH

Germany . 965 parts In-Stock

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ECAB

Sweden . 963 parts In-Stock

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QIE Inc.

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J2 Sourcing AB

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GES GmbH

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AZTECH Wire

Italy . 6,426 parts In-Stock

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$0.120

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IDEA Electronic Components Group

UK . 715 parts In-Stock

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$0.846

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MKK Technologies

India . 1,500 parts In-Stock

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DigiPath Technology Company

USA . 1,500 parts In-Stock

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One Stop Electronics

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Kepictronics

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Corphita

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Perfect Parts

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Northwest PG Solutions

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Cyclops Electronics Ltd (Excess)

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Native Components

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Parana Technologies

USA . 2,027 parts In-Stock

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Alle Elektronik GmbH

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UNI Independent Distributors

Spain . 1,892 parts In-Stock

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Supply Digital

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Assy Fe

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Futuretech Components

Singapore . 1,000 parts In-Stock

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSR43 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1000 ns

Maximum Turn On Time (ton):

250 ns

Trade Compliance

BSR43 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-33-126-6529, 5961331266529

NIIN

331266529

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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