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AS4C256M16D4-75BIN

Alliance Memory

AS4C256M16D4-75BIN by Alliance Memory

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

Median Price

$11.500

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 71 parts In-Stock

1+ parts

$6.380

100+ parts

$6.260

1k+ parts

$6.100

10k+ parts

-

71

$6.380

$6.260

$6.100

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Mouser Electronics

USA . 388 parts In-Stock

1+ parts

$11.500

100+ parts

$9.590

1k+ parts

$8.660

10k+ parts

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388

$11.500

$9.590

$8.660

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DigiKey

USA . 224 parts In-Stock

1+ parts

$11.500

100+ parts

$10.094

1k+ parts

$9.205

10k+ parts

$9.032

224

$11.500

$10.094

$9.205

$9.032

Verical

USA . 209 parts In-Stock

1+ parts

-

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$11.649

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$11.649

209

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$11.649

Distributors (In-Stock)

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Flip Electronics

USA . 10,000 parts In-Stock

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Kruse

Germany . 6,786 parts In-Stock

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6,786

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Kruse Electronics AG

Switzerland . 857 parts In-Stock

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ARCO, INC.

USA . 800 parts In-Stock

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800

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Rutronik

Germany . 209 parts In-Stock

1+ parts

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$37.710

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209

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$37.710

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 609 parts In-Stock

1+ parts

$6.260

100+ parts

$10.090

1k+ parts

-

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609

$6.260

$10.090

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Authorized Procurement Solutions

USA . 418 parts In-Stock

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418

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Microchip USA

USA . 127 parts In-Stock

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Eastek

USA . 58 parts In-Stock

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58

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GreenTree Electronics

Israel . 58 parts In-Stock

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Technical Specifications

DRAM AS4C256M16D4-75BIN attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

1333 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-PBGA-B96

Length:

13.5 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

8

Maximum Standby Current:

.044 Amp

Maximum Supply Current:

235 mA

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

AS4C256M16D4-75BIN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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