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Microchip Technology Small Signal Field Effect Transistors (FET) 7

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
TN0604N3-G-P005 by Microchip Technology

TN0604N3-G-P005

Microchip Technology

TN0604N3-G-P005 by Microchip Technology is a N-CHANNEL FET with 40V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.7A Drain Current and 0.75ohm On Resistance. Ideal for low-power circuits requiring high efficiency and reliability.

HIGH INPUT IMPEDANCE

SINGLE WITH BUILT-IN DIODE

40 V

.7 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

TO-92

O-PBCY-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.74 W

.74 W

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

TN0604N3-G-P013 by Microchip Technology

TN0604N3-G-P013

Microchip Technology

TN0604N3-G-P013 by Microchip Technology is a N-CHANNEL FET with 40V DS breakdown voltage. Ideal for switching applications, it has a max drain current of 0.7A and a built-in diode. Operating in enhancement mode, it can handle up to 0.74W power dissipation at temperatures ranging from -55°C to 150°C.

HIGH INPUT IMPEDANCE

SINGLE WITH BUILT-IN DIODE

40 V

.7 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

TO-92

O-PBCY-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.74 W

.74 W

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

TN0620N3-G-P014 by Microchip Technology

TN0620N3-G-P014

Microchip Technology

Microchip TN0620N3-G-P014 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. Features include single configuration with built-in diode, 1W power dissipation, and -55 to 150°C operating temperature range. Its cylindrical package makes it suitable for through-hole mounting.

SINGLE WITH BUILT-IN DIODE

200 V

.25 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

35 pF

TO-92

O-PBCY-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

1 W

1 W

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

VP0550N3-G-P013 by Microchip Technology

VP0550N3-G-P013

Microchip Technology

VP0550N3-G-P013 by Microchip Technology is a P-CHANNEL FET with 500V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 0.054A ID and 125Ω RDS(on). The transistor has a built-in diode, operates in ENHANCEMENT MODE, and has 10pF Crss.

SINGLE WITH BUILT-IN DIODE

500 V

.054 A

125 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-92

O-PBCY-T3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

ROUND

CYLINDRICAL

P-CHANNEL

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

TP0606N3-G-P002 by Microchip Technology

TP0606N3-G-P002

Microchip Technology

Microchip TP0606N3-G-P002 is a P-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 1W Power Dissipation and 3.5 ohm On Resistance. Operating from -55 to 150 °C, it features METAL-OXIDE SEMICONDUCTOR tech in a CYLINDRICAL package.

SINGLE WITH BUILT-IN DIODE

60 V

.32 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

35 pF

TO-92

O-PBCY-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

P-CHANNEL

1 W

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

TP0606N3-G-P003 by Microchip Technology

TP0606N3-G-P003

Microchip Technology

Microchip TP0606N3-G-P003 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1W Power Dissipation, -55 to 150°C Operating Temperature range, and 3.5 ohm Drain-Source On Resistance.

SINGLE WITH BUILT-IN DIODE

60 V

.32 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

35 pF

TO-92

O-PBCY-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

P-CHANNEL

1 W

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

TP5335K1-G-VAO by Microchip Technology

TP5335K1-G-VAO

Microchip Technology

Microchip TP5335K1-G-VAO is a P-CHANNEL FET with 350V DS Breakdown Voltage, 0.36W Power Dissipation, and 70 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) due to its ENHANCEMENT MODE operation and small outline package.

SINGLE WITH BUILT-IN DIODE

350 V

.085 A

70 ohm

METAL-OXIDE SEMICONDUCTOR

2 pF

TO-236AB

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.36 W

AEC-Q101

YES

Matte Tin (Sn)

GULL WING

DUAL

SWITCHING

SILICON