Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMB53D0UV-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
HIGH RELIABILITY
.1 A
SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE
200
50 V
.16 A
4 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F6
e3
1
6
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
.25 W
AEC-Q101
Other Transistors
YES
MATTE TIN
FLAT
DUAL
SWITCHING
SILICON
.3 V
DMN5L06VK-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 50 V;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.28 A
3 ohm
5 pF
2
-55 Cel
FET General Purpose Power
30
NTZD3154NT1H
Onsemi
NTZD3154NT1H by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 20V, Max Drain Current of 0.54A, and Max Power Dissipation of 0.25W. This small outline transistor operates in enhancement mode with a max temperature of 150 °C.
20 V
.54 A
.55 ohm
20 pF
TIN
NTZD3155CT1H
NTZD3155CT1H by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 0.54A max drain current, and 0.55 ohm max on resistance.
N-CHANNEL AND P-CHANNEL
5LN01SP-AC
5LN01SP-AC by Onsemi is a N-CHANNEL FET with max drain current of 0.1A and power dissipation of 0.25W. Ideal for applications requiring single configuration, it operates at up to 150°C making it suitable for various electronic devices.
SINGLE
e2
NO
Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
DMN5L06DWK-7
DMN5L06DWK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.305A max drain current, suitable for switching applications. It features a separate configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. This small outline transistor has a max power dissipation of 0.25W and can withstand temperatures up to 150°C.
.305 A
R-PDSO-G6
Not Qualified
GULL WING
DMN5L06WK-7
DMN5L06WK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.3A drain current, and 3ohm on-resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology. Operating in enhancement mode at up to 150°C, it meets AEC-Q101 standards for automotive use.
HIGH RELIABILITY, FAST SWITCHING
SINGLE WITH BUILT-IN DIODE
.3 A
R-PDSO-G3
3
FET General Purpose Powers
BSD223PL6327
Infineon Technologies
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Maximum Feedback Capacitance (Crss): 22 pF;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.39 A
1.2 ohm
22 pF
P-CHANNEL
BSS223PWL6327
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Minimum DS Breakdown Voltage: 20 V; Maximum Drain-Source On Resistance: 1.2 ohm;
NTZD5110NT5G
NTZD5110NT5G by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode, ideal for switching applications. Features include 60V DS breakdown voltage, 0.294A max drain current, and 1.6 ohm max on resistance. With small outline package style & operating temp up to 150 °C, it's suitable for various electronic designs.
60 V
.294 A
1.6 ohm
BF861A,215
NXP Semiconductors
BF861A,215 by NXP Semiconductors is a small signal N-CHANNEL FET with 25V DS breakdown voltage. Ideal for amplifier applications, it operates in depletion mode and has a max power dissipation of 0.25W. With a peak reflow temperature of 260°C, this transistor features a junction technology and offers low feedback capacitance at 2.7pF.
LOW NOISE
25 V
JUNCTION
2.7 pF
TO-236AB
DEPLETION MODE
AMPLIFIER
BF861B,215
NXP Semiconductors BF861B,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and 2.7pF Crss feedback capacitance. This SMALL OUTLINE transistor has a max power dissipation of 0.25W and operates up to 150°C temperature.
BF861C,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; JEDEC-95 Code: TO-236AB;
Tin (Sn)
BFT46,215
BFT46,215 by NXP Semiconductors is a small signal N-CHANNEL FET transistor with a min DS breakdown voltage of 25V. It is commonly used as an amplifier in various applications. The transistor operates in depletion mode and has a max power dissipation of 0.25W at a max operating temperature of 150°C.
.01 A
1.5 pF
PMBF4391,215
NXP Semiconductors' PMBF4391,215 is a N-CHANNEL FET with 40V DS breakdown voltage. Ideal for switching applications, it features a single configuration with built-in diode and operates in depletion mode. With a max drain current of 0.012A and small outline package style, it offers fast turn on/off times of 80ns/20ns.
40 V
.012 A
30 ohm
3.5 pF
R-PDSO-F3
20 ns
80 ns
PMBF4392,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: 60 ohm;
.006 A
60 ohm
PMBF4393,215
NXP Semiconductors' PMBF4393,215 is a N-CHANNEL FET for SWITCHING applications. With a 40V DS Breakdown Voltage and 100 ohm On Resistance, it operates in DEPLETION MODE. This SMALL OUTLINE transistor has a max power dissipation of 0.25W and can handle up to 0.003A drain current.
.003 A
100 ohm
PMBFJ108,215
The NXP Semiconductors PMBFJ108,215 is a N-CHANNEL FET for SWITCHING applications. It features a 25V DS Breakdown Voltage, 8 ohm Drain-Source On Resistance, and 15pF Feedback Capacitance. With a DEPLETION MODE operation and GULL WING terminals, it offers reliable performance in small outline packages.
8 ohm
15 pF
PMBFJ109,215
NXP Semiconductors' PMBFJ109,215 is a N-CHANNEL FET for SWITCHING applications. With 25V DS Breakdown Voltage and 12 ohm Drain-Source On Resistance, it operates in DEPLETION MODE. This SMALL OUTLINE transistor has a max power dissipation of 0.25W at 150°C.
12 ohm
PMBFJ110,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Maximum Feedback Capacitance (Crss): 15 pF;
18 ohm
BSA223SP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
AVALANCHE RATED
BSD223P
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Element Material: SILICON; Terminal Finish: TIN;
DMB53D0UDW-7
DMB53D0UDW-7 by Diodes Inc. is a N-channel FET with VCEsat of 0.3V, DS Breakdown Voltage of 50V, and Drain-Source On Resistance of 4Ω. Ideal for switching applications, it features a built-in bipolar transistor and diode in a small outline package suitable for surface mount technology. Operating at up to 150°C, this MOSFET has a max collector current of 0.1A and DC current gain of 200 hFE.
DMB53D0UV-7
N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-F6;
DMB54D0UDW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum VCEsat: .4 V;
ESD PROTECTION, LOW THRESHOLD
220
.4 V
NTZD3155CT5G
NTZD3155CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements & built-in diode for switching applications. Features include 20V DS breakdown voltage, 0.54A max drain current, and 0.55 ohm max on resistance. Ideal for surface mount designs in various electronic systems.
DMN5L06VAK-7
DMN5L06VAK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.28A max drain current, and 3 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150°C. Suitable for small outline packages, it features separate elements with built-in diode and AEC-Q101 compliance.
DMN5L06VK-7
DMN5L06VK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.28A max drain current, and 3 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150°C. It comes in a small outline package with matte tin finish and AEC-Q101 standard compliance.
DMN5L06VK-13A
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Package Shape: RECTANGULAR; JESD-609 Code: e3;
DMN5L06VK-7A
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-30 Code: R-PDSO-F6; Maximum Drain-Source On Resistance: 3 ohm;
DMN5L06VKQ-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMN5L06WKQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain-Source On Resistance: 3 ohm; Peak Reflow Temperature (C): 260;
-65 Cel
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