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.4 W Small Signal Bipolar Junction Transistors (BJT) 8

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MMUN2140LT1G by Onsemi

MMUN2140LT1G

Onsemi

MMUN2140LT1G by Onsemi is a PNP BJT with 3 terminals and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 120. This surface-mount transistor comes in a small outline package with matte tin finish.

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

120

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.4 W

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NSVMMUN2113LT3G by Onsemi

NSVMMUN2113LT3G

Onsemi

NSVMMUN2113LT3G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications in automotive electronics due to AEC-Q101 certification and built-in resistor configuration. Operating temperature range from -55 to 150 °C ensures reliable performance in various environments.

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.4 W

AEC-Q101

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

.25 V

61095 by Micropac Industries

61095

Micropac Industries

Micropac Industries' 61095 is a PNP BJT transistor with max. collector-emitter voltage of 60V, ideal for switching applications. Features include max. power dissipation of 0.4W, min. DC current gain of 100, and max. operating temp of 200°C. Package style is cylindrical with wire terminals in a round shape.

.6 A

60 V

SINGLE

100

TO-18

O-MBCY-W3

1

3

200 Cel

METAL

ROUND

CYLINDRICAL

PNP

.4 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

SWITCHING

SILICON

300 ns

45 ns

KSD227YBU by Fairchild Semiconductor

KSD227YBU

Fairchild Semiconductor

Fairchild Semiconductor's KSD227YBU is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min DC current gain of 120 and can handle a max collector current of 0.3 A. With a max operating temperature of 150°C and collector-emitter voltage of 25 V, it comes in a cylindrical package suitable for through-hole mounting.

.3 A

25 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.4 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

MMUN2231LT1G by Onsemi

MMUN2231LT1G

Onsemi

MMUN2231LT1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and power dissipation of 0.4W. This surface-mount device comes in a small outline package suitable for high-temperature environments up to 150 °C.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

8

TO-236

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.4 W

Not Qualified

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

40

SWITCHING

SILICON

BC856S-QF by Nexperia

BC856S-QF

Nexperia

BC856S-QF by Nexperia is a PNP BJT transistor with VCEsat of 0.3V, hFE of 110, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 100MHz. This small outline transistor features a Gull Wing terminal form in a rectangular package shape.

.1 A

2.5 pF

65 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.4 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC847BPN-QZ by Nexperia

BC847BPN-QZ

Nexperia

BC847BPN-QZ by Nexperia is a Small Signal BJT with NPN and PNP channels. It has 2 separate elements, Gull Wing terminals, and operates at -65 to 150°C. Ideal for switching applications, it offers VCEsat of 0.3V, hFE of 200, and fT of 100MHz in a small outline package.

.1 A

2.2 pF

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.4 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC856S-QH by Nexperia

BC856S-QH

Nexperia

BC856S-QH by Nexperia is a PNP BJT transistor with VCEsat of 0.3V, hFE of 110, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 100MHz. With a compact small outline package style, it features dual terminals in gull wing form.

.1 A

2.5 pF

65 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.4 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V