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.225 W Small Signal Bipolar Junction Transistors (BJT) 11

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MMBT4126LT1 by Onsemi

MMBT4126LT1

Onsemi

MMBT4126LT1 by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 0.225W, and max collector-emitter voltage of 25V. It is used in small outline packages for applications requiring a min DC current gain of 60, such as signal amplification in electronic circuits.

.2 A

25 V

SINGLE

60

TO-236AB

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.225 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SILICON

250 MHz

MMBT3904-7 by Diodes Incorporated

MMBT3904-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MMBT6517LT1G by Onsemi

MMBT6517LT1G

Onsemi

MMBT6517LT1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 350V, max collector current of 0.1A, and min DC current gain of 15. This small outline package with Gull Wing terminals operates up to 150 °C and has a transition frequency of 40MHz.

.1 A

350 V

SINGLE

15

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

40 MHz

MMBT6517LT3G by Onsemi

MMBT6517LT3G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;

.1 A

350 V

SINGLE

15

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

40 MHz

MMBT2222LT3G by Onsemi

MMBT2222LT3G

Onsemi

MMBT2222LT3G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 30V, max collector current of 0.6A, and min DC current gain of 75. With a small outline package style and peak reflow temp of 260 °C, it operates at up to 150°C and has a transition frequency of 250MHz.

.6 A

30 V

SINGLE

75

TO-236

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

285 ns

35 ns

MMBT6520LT3G by Onsemi

MMBT6520LT3G

Onsemi

MMBT6520LT3G by Onsemi is a PNP BJT transistor with 350V VCEO, 0.5A IC, and 40MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. With a max operating temp of 150 °C, it offers a min hFE of 15 and 0.225W power dissipation.

.5 A

350 V

SINGLE

15

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

40 MHz

MMBTA20LT1G by Onsemi

MMBTA20LT1G

Onsemi

MMBTA20LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.225W, hFE of 40, and operates at up to 150 °C. With a max collector-emitter voltage of 40V and peak reflow temp of 260°C, it offers high performance in small outline packages for various electronic designs.

.1 A

40 V

SINGLE

40

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

125 MHz

MMBTA43LT1G by Onsemi

MMBTA43LT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A;

.5 A

200 V

SINGLE

40

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

50 MHz

MMBTA70LT1G by Onsemi

MMBTA70LT1G

Onsemi

MMBTA70LT1G by Onsemi is a PNP BJT transistor with 40V VCEO, 0.1A IC, and 125MHz fT. It is ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.225W. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs requiring compact components.

.1 A

40 V

SINGLE

40

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

125 MHz

MMBT5401-D87Z by Onsemi

MMBT5401-D87Z

Onsemi

MMBT5401-D87Z by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 150V and a max collector current of 0.6A. It is commonly used for switching applications due to its high DC current gain (hFE) of 50 and fast nominal transition frequency of 100MHz.

.6 A

150 V

SINGLE

50

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.225 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

MMBT4401-AU_R1_000A1 by Panjit International

MMBT4401-AU_R1_000A1

Panjit International

Panjit International's MMBT4401-AU_R1_000A1 is a NPN BJT transistor for switching applications. With VCEsat of 0.75V, hFE of 100, and IC of 0.6A, it operates in temperatures from -55 to 150 °C. This small outline package with Gull Wing terminals suits high-speed switching needs up to 250MHz.

.6 A

6.5 pF

40 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.225 W

.225 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

.75 V