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95 W RF Power Field Effect Transistors (FET) 9

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
PD57070-E by STMicroelectronics

PD57070-E

STMicroelectronics

STMicroelectronics' PD57070-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates in ENHANCEMENT MODE at up to 165°C.

SOURCE

SINGLE

65 V

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON

PD57070S-E by STMicroelectronics

PD57070S-E

STMicroelectronics

PD57070S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 95 W.

SOURCE

SINGLE

65 V

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

AMPLIFIER

SILICON

PD84010-E by STMicroelectronics

PD84010-E

STMicroelectronics

PD84010-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.

SOURCE

SINGLE

40 V

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

PD84010S-E by STMicroelectronics

PD84010S-E

STMicroelectronics

PD84010S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance up to 165 °C.

SOURCE

SINGLE

40 V

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

AMPLIFIER

SILICON

PD84010TR-E by STMicroelectronics

PD84010TR-E

STMicroelectronics

PD84010TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.

SOURCE

SINGLE

40 V

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

PD57070S by STMicroelectronics

PD57070S

STMicroelectronics

PD57070S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device ensures efficient performance in demanding environments.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e0

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

FLAT

DUAL

AMPLIFIER

SILICON

PD55035-E by STMicroelectronics

PD55035-E

STMicroelectronics

PD55035-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max power dissipation of 95 W.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

PD55035S-E by STMicroelectronics

PD55035S-E

STMicroelectronics

PD55035S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance with a max power dissipation of 95 W.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

1

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

AMPLIFIER

SILICON

PD55035STR-E by STMicroelectronics

PD55035STR-E

STMicroelectronics

STMicroelectronics PD55035STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 95W Power Dissipation. Ideal for high-power RF amplification needs.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON