Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
IPD33CN10NGBUMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V;
47 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
27 A
.033 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252AA
R-PSSO-G2
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
58 W
108 A
Not Qualified
FET General Purpose Powers
YES
GULL WING
SINGLE
SWITCHING
SILICON
IPP50CN10NGXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Drain Current (ID): 20 A; No. of Elements: 1;
29 mJ
20 A
.05 ohm
TO-220AB
R-PSFM-T3
e3
3
FLANGE MOUNT
80 A
NO
MATTE TIN
THROUGH-HOLE
IPP50R199CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 17 A; JESD-609 Code: e3;
436 mJ
ISOLATED
500 V
17 A
.199 ohm
150 Cel
40 A
TIN
IPP50R250CPXKSA1
Infineon's IPP50R250CPXKSA1 is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 31A max pulsed drain current and 0.25 ohm max drain-source resistance. The transistor operates in enhancement mode, with a package style of flange mount and an isolated case connection.
345 mJ
13 A
.25 ohm
31 A
IPP50R299CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 26 A; Terminal Form: THROUGH-HOLE;
289 mJ
12 A
.299 ohm
26 A
IPP50R399CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
215 mJ
9 A
.399 ohm
83 W
IPP50R520CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 7.1 A; Terminal Finish: TIN; No. of Terminals: 3;
166 mJ
7.1 A
.52 ohm
15 A
IPP60R520CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 17 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
600 V
6.8 A
IPP60R600CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Maximum Drain Current (ID): 6.1 A; Transistor Element Material: SILICON;
144 mJ
6.1 A
.6 ohm
IPA65R380C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .38 ohm; JESD-609 Code: e3; No. of Terminals: 3;
650 V
10.6 A
.38 ohm
29 A
IPB65R380C6ATMA1
IPB65R380C6ATMA1 by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 650V. It is designed for switching applications, offering a max pulsed drain current of 29A and a max drain-source on resistance of 0.38 ohm.
TO-263AB
IPD65R380C6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN;
TO-252
IPI65R380C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 10.6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 650 V;
TO-262AA
R-PSIP-T3
IN-LINE
IPP65R380C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; JEDEC-95 Code: TO-220AB; Package Style (Meter): FLANGE MOUNT;
IPI600N25N3GAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .06 ohm; Maximum Drain Current (ID): 25 A;
210 mJ
250 V
25 A
.06 ohm
100 A
IPI200N25N3GAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Maximum Operating Temperature: 175 Cel; Package Style (Meter): IN-LINE;
320 mJ
64 A
.02 ohm
256 A
IPI320N20N3GAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 200 V; Package Shape: RECTANGULAR; Terminal Finish: TIN;
190 mJ
200 V
34 A
.032 ohm
136 A
IPI110N20N3GAKSA1
IPI110N20N3GAKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 0.011 ohm Drain-Source On Resistance. It is used for SWITCHING applications, featuring a max IDM of 352A and EAS of 560mJ. Operating in ENHANCEMENT MODE, it has a max ID of 88A and can withstand up to 175°C temperature.
560 mJ
88 A
.011 ohm
352 A
IPW65R070C6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Terminal Position: SINGLE; Avalanche Energy Rating (EAS): 1160 mJ;
1160 mJ
.07 ohm
TO-247
150 A
IPA65R310CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: ISOLATED; Maximum Drain-Source On Resistance: .31 ohm; Maximum Drain Current (ID): 11.4 A;
290 mJ
11.4 A
.31 ohm
34.4 A
Tin (Sn)
IPB65R310CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 11.4 A; Maximum Drain-Source On Resistance: .31 ohm; Terminal Position: SINGLE;
IPI65R310CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPP65R310CFDXKSA1
Infineon's IPP65R310CFDXKSA1 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. Featuring a max IDM of 34.4A and 0.31 ohm RDS(on), it operates in ENHANCEMENT MODE with an EAS of 290mJ. The PLASTIC/EPOXY package style makes it suitable for various power electronics designs.
IPW65R310CFDFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; No. of Elements: 1; JEDEC-95 Code: TO-247;
SPA06N60C3XKSA1
SPA06N60C3XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage. Ideal for SWITCHING applications, it features 18.6A IDM and 0.75 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and EAS of 200mJ.
AVALANCHE RATED
200 mJ
6.2 A
.75 ohm
18.6 A
SPA11N60CFDXKSA1
SPA11N60CFDXKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, 28A IDM, and 0.44 ohm RDS(on). Ideal for power applications requiring high drain current and low on-resistance. Suitable for use in power supplies, motor control, and industrial equipment due to its high energy rating of 340mJ.
340 mJ
11 A
.44 ohm
28 A
SPD04N60C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .95 ohm; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
130 mJ
4.5 A
.95 ohm
13.5 A
SPU04N60C3BKMA1
Infineon's SPU04N60C3BKMA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 13.5A IDM, 130mJ EAS, and 0.95ohm RDS(ON). Operating in ENHANCEMENT MODE at up to 150°C, it has a SILICON element and IN-LINE package style.
TO-251AA
SPI11N60CFDHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 600 V;
SPA04N50C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 13.5 A; No. of Elements: 1; Additional Features: AVALANCHE RATED;
SPP04N50C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 4.5 A; No. of Terminals: 3; Qualification: Not Qualified;
SPA07N65C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: ISOLATED; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 650 V;
230 mJ
7.3 A
21.9 A
SPP07N65C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 230 mJ; JESD-30 Code: R-PSFM-T3; Operating Mode: ENHANCEMENT MODE;
IPA60R950C6XKSA1
Infineon's IPA60R950C6XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features a max IDM of 12A and 0.95 ohm RDS(on), operating in enhancement mode at up to 150°C. The transistor has a built-in diode, through-hole terminals, and offers an EAS of 46mJ for robust performance.
46 mJ
4.4 A
IPB60R950C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .95 ohm; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE;
IPP60R950C6XKSA1
IPP60R950C6XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 12A max IDM, 46mJ EAS, and 0.95 ohm RDS(on). Package style is flange mount with silicon element material and tin terminal finish.
BSF077N06NT3GXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .0077 ohm; Case Connection: DRAIN;
150 mJ
60 V
.0077 ohm
R-MBCC-N3
METAL
CHIP CARRIER
224 A
NO LEAD
BOTTOM
BSO080P03NS3GXUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Transistor Element Material: SILICON;
149 mJ
30 V
.008 ohm
R-PDSO-G8
8
P-CHANNEL
48 A
DUAL
IPP114N12N3GXKSA1
IPP114N12N3GXKSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 300A IDM, 120mJ EAS, and 0.0114 ohm RDS(on). Operating at up to 175°C, it has a SILICON element and TIN finish in a FLANGE MOUNT package.
120 mJ
75 A
.0114 ohm
300 A
BSB014N04LX3GXUMA1
Infineon Technologies' BSB014N04LX3GXUMA1 is a power FET with N-channel polarity. It has a min DS breakdown voltage of 40V and can handle a max pulsed drain current of 400A. This transistor is commonly used for switching applications.
260 mJ
40 V
180 A
.0014 ohm
e4
-40 Cel
89 W
400 A
SILVER NICKEL
BSB015N04NX3GXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Package Shape: RECTANGULAR; JESD-609 Code: e4;
.0015 ohm
BSC046N10NS3GATMA1
Infineon's BSC046N10NS3GATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 350mJ EAS, and 0.0046 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C. Suitable for high-power circuits due to its 156W Pd rating.
350 mJ
.0046 ohm
R-PDSO-N8
156 W
FET General Purpose Power
BSO211PHXUMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 3.2 A; No. of Elements: 2; Maximum Drain-Source On Resistance: .067 ohm;
LOGIC LEVEL COMPATIBLE
28 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
3.2 A
.067 ohm
18.4 A
BSO303SPHXUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G8; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
97 mJ
7.2 A
.021 ohm
36 A
IPD65R250C6XTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-252; JESD-609 Code: e3;
46 A
IPD65R250E6XTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Terminal Form: GULL WING; Minimum DS Breakdown Voltage: 650 V;
IPA65R150CFDXKSA1
Infineon's IPA65R150CFDXKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 72A IDM, 614mJ EAS, and 0.15 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 34.7W in a FLANGE MOUNT package.
614 mJ
22.4 A
.15 ohm
-55 Cel
34.7 W
72 A
IPB65R150CFDATMA1
Infineon's IPB65R150CFDATMA1 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Features include 72A pulsed drain current, 0.15 ohm max on-resistance, and 614mJ avalanche energy rating. With a temp range of -55 to 150 °C, it's suitable for high-power enhancement mode operations in various electronic systems.
© 2023 All rights reserved
