Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2N3819-D27Z
Fairchild Semiconductor
2N3819-D27Z by Fairchild Semiconductor is a N-CHANNEL power FET with a max drain current of 0.05 A and max power dissipation of 0.35 W. It operates in enhancement mode and uses metal-oxide semiconductor technology. It is commonly used in applications requiring low-power switching or amplification.
SINGLE
.05 A
METAL-OXIDE SEMICONDUCTOR
e3
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
.35 W
FET General Purpose Power
NO
Matte Tin (Sn)
FQD2N60CTF
FQD2N60CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.9A max drain current and 44W power dissipation. Ideal for applications requiring high efficiency in power management systems, it operates in enhancement mode at up to 150°C, making it suitable for various industrial and consumer electronics.
1.9 A
260
44 W
YES
MATTE TIN
FDC2512-F095
FDC2512-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.4A max drain current and 1.6W max power dissipation in SINGLE configuration. It operates in ENHANCEMENT MODE, suitable for applications requiring up to 150°C operating temperature like power management systems.
1.4 A
1.6 W
FDC3512-F095
FDC3512-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 3A max drain current and 1.6W max power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for power management in various electronic devices.
3 A
FDC3612-F095
FDC3612-F095 by Fairchild Semiconductor is a N-CHANNEL power FET with a max drain current of 2.6A and max power dissipation of 1.6W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
2.6 A
FDC5612-F095
FDC5612-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 4.3A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power management systems and motor control circuits.
4.3 A
FDC655BN-NBNN007
FDC655BN-NBNN007 by Fairchild Semiconductor is a N-CHANNEL Power FET with 6.3A max drain current and 1.6W max power dissipation in enhancement mode. Ideal for applications requiring high efficiency and compact design, such as power supplies and motor control systems operating up to 150°C.
6.3 A
30
NDS355AN-NB9L007A
NDS355AN-NB9L007A by Fairchild Semiconductor is an N-CHANNEL power FET with a max drain current of 1.7A and a max power dissipation of 0.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
1.7 A
.5 W
Tin (Sn)
FQPF6N90CT
FQPF6N90CT by Fairchild Semiconductor is a N-CHANNEL Power FET with 6A max drain current and 56W max power dissipation. Ideal for applications requiring high power handling such as motor control systems or power supplies due to its enhancement mode operation and MOSFET technology.
6 A
56 W
FDS8984-F40
FDS8984-F40 by Fairchild Semiconductor is an N-CHANNEL Power FET with 7A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in a compact design, such as power supplies and motor control systems. Operating at up to 150°C, it offers enhanced performance in demanding environments.
7 A
FDD14AN06LA0_F085
Fairchild Semiconductor's FDD14AN06LA0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 9.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 55mJ and can handle up to 125W power dissipation at temperatures ranging from -55°C to 175°C.
55 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
9.5 A
.0116 ohm
TO-252AA
R-PSSO-G2
2
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
125 W
Not Qualified
AEC-Q101
GULL WING
SWITCHING
SILICON
FQD3P50TM_F085
FQD3P50TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 8.4A and EAS of 250mJ, operating in ENHANCEMENT MODE at up to 150°C.
250 mJ
500 V
2.1 A
4.9 ohm
TO-252
P-CHANNEL
50 W
8.4 A
Other Transistors
FDB3632_F085
Fairchild Semiconductor's FDB3632_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 12A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.009 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 310W and can withstand temperatures up to 175°C.
338 mJ
100 V
12 A
.009 ohm
TO-263AB
310 W
FET General Purpose Powers
FQD9N25TM_F080
FQD9N25TM_F080 by Fairchild Semiconductor is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 7.4A Max Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a 0.42 ohm Max RDS(on) and 29.6A IDM rating for high-performance requirements.
165 mJ
250 V
7.4 A
.42 ohm
TO-252AB
29.6 A
FDB8860_F085
Fairchild Semiconductor's FDB8860_F085 is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 31A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0027 ohm On Resistance, and operates in ENHANCEMENT MODE.
947 mJ
30 V
31 A
.0027 ohm
254 W
FQA19N20L
FQA19N20L by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 100A and EAS of 250mJ, making it suitable for high-power operations. With a 0.14 ohm RDS(on), this MOSFET offers efficient performance in ENHANCEMENT MODE at up to 150°C.
200 V
23 A
25 A
.14 ohm
R-PSFM-T3
3
FLANGE MOUNT
190 W
100 A
THROUGH-HOLE
FDP4020P
FDP4020P by Fairchild Semiconductor is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 16A Drain Current, and 0.08 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 37.5W. The transistor operates at up to 175°C and has a package style of FLANGE MOUNT.
20 V
16 A
.08 ohm
TO-220AB
37.5 W
48 A
FDZ5047N
Fairchild Semiconductor's FDZ5047N is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 75A IDM and 0.0029 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package has a RECTANGULAR shape with BALL terminals, making it suitable for surface mount installations.
22 A
.0029 ohm
R-PBGA-B36
e0
36
GRID ARRAY
2.8 W
75 A
TIN LEAD
BALL
BOTTOM
NDT451ANJ23Z
Fairchild Semiconductor's NDT451ANJ23Z is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 25A Max Pulsed Drain Current, and 0.035 ohm Max Drain-Source Resistance. The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 3W at 150°C.
7.2 A
.035 ohm
R-PDSO-G4
4
3 W
DUAL
FQPF9N15
FQPF9N15 by Fairchild Semiconductor is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features 27.6A Max Pulsed Drain Current, 80mJ Avalanche Energy Rating, and 0.4 ohm Max Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 44W at 175°C.
80 mJ
ISOLATED
150 V
6.9 A
.4 ohm
27.6 A
FDB86363_F085
Fairchild Semiconductor's FDB86363_F085 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage. It has 110A Drain Current, 0.0024 ohm On Resistance, and 300W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it comes in a PLASTIC/EPOXY package with GULL WING terminals.
512 mJ
80 V
110 A
.0024 ohm
300 W
FDB7030BLS
Fairchild Semiconductor's FDB7030BLS is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM and 0.0105 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 100°C. Suitable for surface mount with GULL WING terminals, this transistor offers a max power dissipation of 65W in a RECTANGULAR package.
56 A
.0105 ohm
100 Cel
65 W
160 A
Tin/Lead (Sn85Pb15)
IRFP450B
Fairchild Semiconductor's IRFP450B is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 56A IDM, 990mJ EAS, and 0.39 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C.
990 mJ
14 A
.39 ohm
205 W
FQA24N50F
FQA24N50F by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 24A, Pulsed Drain Current of 96A, and an On Resistance of 0.2 ohm. The transistor operates in ENHANCEMENT MODE and has a Max Power Dissipation of 290W.
1100 mJ
24 A
.2 ohm
290 W
96 A
FDB2532_F085
FDB2532_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, 79A Drain Current, and 0.016 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with a built-in DIODE. This transistor operates at up to 175°C and has a power dissipation of 310W in a small outline package.
400 mJ
79 A
8 A
.016 ohm
FDD4243_F085
Fairchild Semiconductor's FDD4243_F085 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 24A Drain Current, and 0.044 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 42W and wide operating temperature range (-55 to 175 °C).
ULTRA-LOW RESISTANCE
84 mJ
40 V
.044 ohm
42 W
FDD6637_F085
FDD6637_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 55A, 0.0116 ohm On Resistance, and operates in ENHANCEMENT MODE. This METAL-OXIDE SEMICONDUCTOR transistor has a max power dissipation of 57W and can withstand temperatures up to 175°C.
61 mJ
35 V
55 A
21 A
57 W
FDD8444L
FDD8444L by Fairchild Semiconductor is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features an EAS of 295mJ, 0.0107 ohm RDS(on), and operates in ENHANCEMENT MODE.
295 mJ
50 A
.0107 ohm
153 W
FQB34N20TM_AM002
Fairchild Semiconductor's FQB34N20TM_AM002 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 124A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.075 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE.
640 mJ
.075 ohm
245
180 W
124 A
FQD5N60CTF
FQD5N60CTF by Fairchild Semiconductor is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 11.2A IDM, 210mJ EAS, and 49W Max Power Dissipation. Its PLASTIC/EPOXY package with GULL WING terminals makes it suitable for surface mount installations.
210 mJ
600 V
2.8 A
2.5 ohm
49 W
11.2 A
FQD6N50CTF
FQD6N50CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 300mJ EAS, and 1.2ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 61W at 150°C.
300 mJ
4.5 A
1.2 ohm
61 W
18 A
IRF630B_FP001
Fairchild Semiconductor's IRF630B_FP001 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.4 ohm RDS(on), and 72W Pdiss.
160 mJ
9 A
72 W
36 A
FQD6N40CTF
FQD6N40CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 18A and Avalanche Energy Rating of 270mJ. With a max power dissipation of 48W and operating temperature up to 150°C, it offers reliable performance in various electronic systems.
FAST SWITCHING
270 mJ
400 V
1 ohm
48 W
BUZ11_R4941
Fairchild Semiconductor's BUZ11_R4941 is a N-CHANNEL FET with 30A ID and 75W power dissipation. Ideal for applications requiring high drain current, such as power supplies and motor control systems. Operating in enhancement mode, it offers reliable performance up to 150°C temperature.
30 A
75 W
FQA36P15_F109
FQA36P15_F109 by Fairchild Semiconductor is a P-CHANNEL Power FET with 150V DS Breakdown Voltage. It features a max Drain Current of 36A, 0.09 ohm On Resistance, and 294W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor has a package style of FLANGE MOUNT and operates up to 175°C.
1400 mJ
.09 ohm
294 W
144 A
FDS3572_NL
FDS3572_NL by Fairchild Semiconductor is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 8.9A ID and 0.016 ohm RDS(on), it offers high performance in a SMALL OUTLINE package for surface mount assembly.
515 mJ
8.9 A
R-PDSO-G8
8
IRF540N_R4942
Fairchild Semiconductor's IRF540N_R4942 is a N-CHANNEL Power FET with 33A max drain current and 120W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as motor control and power supplies.
33 A
120 W
Tin/Lead (Sn/Pb)
NDS7002A_NB9GGTXA
Fairchild Semiconductor's NDS7002A_NB9GGTXA is a single N-channel power FET for switching applications. It features a 60V DS breakdown voltage, 1.5A max pulsed drain current, and 2 ohm max drain-source resistance. With Gull Wing terminals and small outline package style, it operates in an enhancement mode with a temperature range of -65 to 150°C.
.28 A
2 ohm
5 pF
TO-236AB
R-PDSO-G3
-65 Cel
.3 W
1.5 A
FQPF5N60CYDTU
FQPF5N60CYDTU by Fairchild Semiconductor is a N-CHANNEL Power FET with 4.5A max drain current and 33W max power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies and motor control systems.
33 W
FDP86363_F085
FDP86363_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 110A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0028 ohm On Resistance, and operates in ENHANCEMENT MODE up to 175°C.
.0028 ohm
NOT SPECIFIED
FDD5810_F085
FDD5810_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 37A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.022 ohm.
45 mJ
37 A
.022 ohm
FDB5800_F085
FDB5800_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 80A ID and 242W power dissipation. It operates in enhancement mode, suitable for high-power applications like motor control and power supplies. This single configuration FET has a max operating temperature of 175°C, making it ideal for demanding environments.
80 A
242 W
FDD26AN06A0_F085
Fairchild Semiconductor FDD26AN06A0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It has 36A Drain Current, 0.026 ohm On Resistance, and 75W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 175 °C.
35 mJ
.026 ohm
FDP2710_F085
FDP2710_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 250V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, 50A Drain Current, and 0.047 ohm On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 260W and can handle an Avalanche Energy of 483mJ.
483 mJ
4 A
.047 ohm
260 W
FDC2612_F095
FDC2612_F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.1A ID and 1.6W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for low-power electronic devices requiring efficient power management.
1.1 A
FDC642P_F085
FDC642P_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 4A Drain Current, and 0.065 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount assembly.
72 mJ
.065 ohm
R-PDSO-G6
6
1.2 W
20 A
FDS8949_F085
FDS8949_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 20A IDM, and 0.029 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic devices requiring efficient power management in compact designs.
26 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.029 ohm
2 W
FDS8984_F085
FDS8984_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2 ELEMENTS WITH BUILT-IN DIODE, 30A Max Pulsed Drain Current, and 0.023 ohm Max Drain-Source On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
32 mJ
.023 ohm
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