Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FDS2170N7
Fairchild Semiconductor
FDS2170N7 by Fairchild Semiconductor is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max Pulsed Drain Current and 0.128 ohm Max Drain-Source On Resistance. The PLASTIC/EPOXY package with GULL WING terminals operates in ENHANCEMENT MODE at up to 150°C.
400 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
200 V
3 A
.128 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
e4
1
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
3 W
20 A
Not Qualified
FET General Purpose Power
YES
NICKEL PALLADIUM GOLD
GULL WING
DUAL
SWITCHING
SILICON
FQD17P06TF
FQD17P06TF by Fairchild Semiconductor is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a 48A Max Pulsed Drain Current and 0.135 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 44W and can withstand temperatures up to 150°C.
300 mJ
60 V
12 A
.135 ohm
TO-252
R-PSSO-G2
e3
2
P-CHANNEL
44 W
48 A
Other Transistors
MATTE TIN
SINGLE
FQB13N10TM
FQB13N10TM by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 51.2A IDM, 95mJ EAS, and 0.18 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 65W at 175°C.
95 mJ
100 V
12.8 A
.18 ohm
TO-263AB
175 Cel
65 W
51.2 A
FQB14N30TM
FQB14N30TM by Fairchild Semiconductor is a N-CHANNEL Power FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 14.4A, Max Power Dissipation of 147W, and an Operating Temperature up to 150°C. This SINGLE configuration transistor in PLASTIC/EPOXY package is designed for high-performance ENHANCEMENT MODE operation.
600 mJ
300 V
14.4 A
.29 ohm
147 W
57.6 A
FQD19N10LTF
FQD19N10LTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 62.4A Max Pulsed Drain Current, 220mJ Avalanche Energy Rating, and 0.11 ohm Max Drain-Source On Resistance. Suitable for high-power switching circuits in various electronic devices.
220 mJ
15.6 A
.11 ohm
50 W
62.4 A
FQD2N80TF
FQD2N80TF by Fairchild Semiconductor is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. This MOSFET has a max IDM of 7.2A and EAS of 180mJ, making it ideal for high-power operations in small outline packages.
180 mJ
800 V
1.8 A
6.3 ohm
7.2 A
FQD30N06LTM
FQD30N06LTM by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 96A IDM and 0.047 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 44W at 150°C.
24 A
.047 ohm
96 A
FQP630TSTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSFM-T3; Transistor Element Material: SILICON;
162 mJ
9 A
.4 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
36 A
NO
THROUGH-HOLE
FQD5P10TF
FQD5P10TF by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 14.4A IDM, and 1.05 ohm RDS(on). With a max power dissipation of 25W and operating temperature up to 150°C, it's ideal for high-power switching circuits in various electronic devices.
55 mJ
3.6 A
1.05 ohm
25 W
FQD7P20TF
FQD7P20TF by Fairchild Semiconductor is a P-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 22.8A and EAS of 570mJ, operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a 0.69 ohm RDS(on) and can handle up to 55W power dissipation.
570 mJ
5.7 A
.69 ohm
55 W
22.8 A
SFH9250L
SFH9250L by Fairchild Semiconductor is a P-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 78A IDM and 990mJ EAS, operating in ENHANCEMENT MODE at up to 150°C. Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals.
LOGIC LEVEL COMPATIBLE
990 mJ
19.5 A
.23 ohm
204 W
78 A
SFM9014TF
SFM9014TF by Fairchild Semiconductor is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max IDM of 14A and EAS of 8.3mJ, it offers high performance in a small outline package suitable for various power management needs.
8.3 mJ
.5 ohm
R-PDSO-G4
4
2.8 W
14 A
SFR9024TM
Fairchild Semiconductor's SFR9024TM is a P-CHANNEL FET for switching applications. It features a 60V DS breakdown voltage, 31A IDM, and 0.28 ohm RDS(on). With a max power dissipation of 32W, it operates in enhancement mode at up to 150°C.
104 mJ
7.8 A
.28 ohm
32 W
31 A
FQD11P06TF
FQD11P06TF by Fairchild Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 37.6A Max IDM, 160mJ EAS, and 0.185 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 38W at 150°C.
160 mJ
9.4 A
.185 ohm
38 W
37.6 A
FQD12N20LTF
FQD12N20LTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, 36A IDM, and 0.32 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 55W Pdiss and -55 to 150°C operating temp.
210 mJ
.32 ohm
FQA9N90C
FQA9N90C by Fairchild Semiconductor is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 36A Max Pulsed Drain Current and 1.4ohm Max RDS(ON), operating in ENHANCEMENT MODE at up to 150°C.
900 mJ
900 V
1.4 ohm
280 W
FQP13N50C
FQP13N50C by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 52A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 195W, this transistor has a 0.48 ohm Drain-Source On Resistance and can handle up to 13A Drain Current.
860 mJ
500 V
13 A
.48 ohm
195 W
52 A
FDD8447L_F085
FDD8447L_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0085 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 65W and can withstand temperatures up to 175°C.
40 mJ
40 V
50 A
.0085 ohm
TO-252AA
-55 Cel
260
AEC-Q101
30
FQH140N10
FQH140N10 by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 560A IDM, and 0.01 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 375W and can handle up to 175°C temperature.
1500 mJ
140 A
.01 ohm
TO-247
375 W
560 A
FQP90N10V2
FQP90N10V2 by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 360A IDM and 0.01 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 250W and can withstand temperatures up to 175°C.
2430 mJ
90 A
250 W
360 A
FDD24AN06LA0_F085
Fairchild Semiconductor's FDD24AN06LA0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 40A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.019 ohm.
32 mJ
40 A
7.1 A
.019 ohm
75 W
FQB22P10TM_F085
FQB22P10TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, 88A IDM, and 0.125 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 125W at 175°C.
710 mJ
22 A
.125 ohm
245
125 W
88 A
FDD26AN06A0
FDD26AN06A0 by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 7A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.058 ohm.
35 mJ
7 A
.058 ohm
FDD8880_NL
FDD8880_NL by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a 13A Drain Current, 0.015 ohm On Resistance, and operates in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has GULL WING terminals and can handle up to 55W power dissipation at 175°C.
53 mJ
30 V
35 A
.015 ohm
HUF75344P3_NL
Fairchild Semiconductor's HUF75344P3_NL is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 75A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in PLASTIC/EPOXY package.
55 V
75 A
.008 ohm
285 W
FQD6N60CTM
FQD6N60CTM by Fairchild Semiconductor is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a single configuration with built-in diode and can handle up to 16A of pulsed drain current. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 80W and an on-resistance of 2 ohm.
FAST SWITCHING
600 V
4 A
2 ohm
80 W
16 A
FDS4141_F085
FDS4141_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.013 ohm Drain-Source On Resistance and can handle up to 1.6W power dissipation at 150°C.
229 mJ
10.8 A
.013 ohm
1.6 W
FQD12P10TM_F085
FQD12P10TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a max IDM of 37.6A and EAS of 370mJ, suitable for SWITCHING applications in ENHANCEMENT MODE operation. This transistor features a 0.29 ohm Drain-Source On Resistance and operates at up to 150°C temperature.
370 mJ
Matte Tin (Sn)
FDS4465_F085
FDS4465_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 20V DS Breakdown Voltage and 13.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W and can withstand temperatures up to 175°C.
20 V
13.5 A
2.5 W
FCA20N60_F109
Fairchild Semiconductor's FCA20N60_F109 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 60A IDM and 0.19 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 208W and can withstand temperatures up to 150°C.
690 mJ
.19 ohm
208 W
60 A
FQA10N80C_F109
Fairchild Semiconductor's FQA10N80C_F109 is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 40A IDM and 920mJ EAS. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 240W at 150°C.
920 mJ
10 A
1.1 ohm
240 W
FQA11N90C_F109
Fairchild Semiconductor's FQA11N90C_F109 is a N-CHANNEL Power FET with 900V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 44A IDM and 960mJ EAS. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 300W at 150°C.
960 mJ
11 A
300 W
44 A
FQA11N90_F109
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 11.4 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
1000 mJ
11.4 A
.96 ohm
45.6 A
FQA9N90C_F109
FQA9N90C_F109 by Fairchild Semiconductor is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 36A and EAS of 900mJ, operating in ENHANCEMENT MODE. The transistor has a single configuration with built-in diode, suitable for high-power requirements up to 280W at 150°C.
FDD8580
FDD8580 by Fairchild Semiconductor is a N-CHANNEL Power FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 153A and EAS of 66mJ, operating in ENHANCEMENT MODE at up to 175°C. This PLASTIC/EPOXY transistor has a RECTANGULAR shape, GULL WING terminals, and 0.009 ohm Drain-Source On Resistance.
66 mJ
.009 ohm
49.5 W
153 A
FQPF13N50CT
FQPF13N50CT by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 13A ID. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE and 0.48 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has an IDM of 52A and EAS of 860mJ.
ISOLATED
NOT SPECIFIED
FCH041N65F_F085
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
FCH072N60F_F085
FCH072N60F_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max Drain Current of 52A and an Operating Temperature range of -55 to 150 °C.
1128 mJ
.072 ohm
481 W
200 ns
100 ns
FDMS86380_F085
Fairchild Semiconductor's FDMS86380_F085 is a N-CHANNEL Power FET for SWITCHING applications. With 80V DS Breakdown Voltage, it offers 50A Drain Current and 75W Power Dissipation. Ideal for ENHANCEMENT MODE operations in various electronic devices.
AVALANCHE ENERGY RATED
16 mJ
80 V
13.4 ohm
14 pF
R-PDSO-N5
5
NO LEAD
30 ns
31 ns
FDB86569_F085
Fairchild Semiconductor's FDB86569_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 80A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 94W Power Dissipation, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this MOSFET has an Avalanche Energy Rating of 41mJ and withstands temperatures up to 175°C.
41 mJ
80 A
.0056 ohm
94 W
45 ns
53 ns
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