Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STL160N3LLH6
STMicroelectronics
STL160N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 140A IDM, and 0.002 ohm RDS(on). Ideal for SWITCHING applications due to its 80W Pdiss, 150 °C Tmax, and DUAL terminal position.
ULTRA-LOW RESISTANCE
900 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
160 A
35 A
.002 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-N5
1
5
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
80 W
140 A
FET General Purpose Power
YES
NO LEAD
DUAL
SWITCHING
SILICON
STL75N8LF6
STL75N8LF6 by STMicroelectronics is a N-CHANNEL FET with 80V DS Breakdown Voltage, 72A IDM, and 0.0082 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175 °C max temp. The transistor features a built-in diode, small outline package style, and 670mJ EAS rating.
670 mJ
80 V
75 A
18 A
.0082 ohm
175 Cel
72 A
STL80N75F6
STL80N75F6 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A Drain Current, 0.0063 ohm On Resistance, and 150 °C Operating Temperature. This PLASTIC/EPOXY transistor has a DUAL Terminal Position and is suitable for high-power circuits requiring fast switching capabilities.
75 V
80 A
.0063 ohm
74 A
FET General Purpose Powers
STL100N6LF6
STL100N6LF6 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 88A IDM, and 0.0072 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. The PLASTIC/EPOXY package has 5 terminals and DUAL terminal position.
60 V
100 A
22 A
.0072 ohm
88 A
STL35N6F3
STL35N6F3 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.022 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an 80W power dissipation rating and can withstand up to 175 °C temperature.
409 mJ
.022 ohm
R-PDSO-F5
FLAT
STP4NB50
STP4NB50 by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 15.2A max pulsed drain current and 220mJ avalanche energy rating. The transistor operates in enhancement mode, with a max power dissipation of 80W at 150 °C.
220 mJ
500 V
3.8 A
2.8 ohm
TO-220AB
R-PSFM-T3
e0
3
FLANGE MOUNT
15.2 A
Not Qualified
NO
TIN LEAD
THROUGH-HOLE
SINGLE
STP5NB40
STP5NB40 by STMicroelectronics is a N-CHANNEL FET with 400V DS Breakdown Voltage and 19A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 80W and operates in ENHANCEMENT MODE at up to 150 °C.
200 mJ
400 V
4.7 A
1.8 ohm
e3
19 A
MATTE TIN
SPU18P06P
Infineon Technologies
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Drain Current (ID): 18.6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
AVALANCHE RATED
150 mJ
18.6 A
.13 ohm
TO-251
R-PSIP-T3
IN-LINE
P-CHANNEL
74.4 A
Other Transistors
SPD18P06P
Infineon's SPD18P06P is a P-CHANNEL FET with 60V DS Breakdown Voltage, 74.4A IDM, and 0.13 ohm RDS(on). Ideal for power applications, it operates in Enhancement Mode with 80W Power Dissipation and can handle up to 175°C.
TO-252
R-PSSO-G2
2
260
GULL WING
STH15NB50FI
STH15NB50FI by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 58.4A IDM, 850mJ EAS, and 0.36 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 80W and can handle up to 150 °C.
850 mJ
ISOLATED
10.5 A
.36 ohm
58.4 A
SPB18P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Additional Features: AVALANCHE RATED; Package Shape: RECTANGULAR;
151 mJ
18.7 A
TO-263AB
220
74.8 A
STB55NF03LT4
STB55NF03LT4 by STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a max drain current of 55 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
LOGIC LEVEL COMPATIBLE
55 A
.02 ohm
220 A
SPD30N06S2L-23
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; JESD-609 Code: e0; JESD-30 Code: R-PSSO-G2;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
55 V
30 A
.03 ohm
120 A
STB45NF06
STB45NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 38A Drain Current, and 0.028 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE, with 152A Pulsed Drain Current capability.
260 mJ
38 A
.028 ohm
152 A
STP8NS25
STP8NS25 by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 32A IDM, and 0.45 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high power dissipation of 80W at max temp of 150 °C.
250 V
8 A
.45 ohm
32 A
STL80N4LLF3
STL80N4LLF3 by STMicroelectronics is an N-channel FET designed for high-efficiency applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
40 V
20 A
.007 ohm
R-PDSO-N8
8
STL150N3LLH5
STL150N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 150 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
300 mJ
150 A
.0024 ohm
Matte Tin (Sn) - annealed
30
NTB85N03T4
Onsemi
NTB85N03T4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 85A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 45A IDM, and 0.0068 ohm RDS(on). Operating in ENHANCEMENT MODE, it has an EAS of 61mJ and can handle up to 80W power dissipation.
61 mJ
85 A
15 A
.0068 ohm
235
45 A
NTB85N03
NTB85N03 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 61mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 80W and 0.0068 ohm RDS(on), it offers high performance in a small outline package.
NTP4302
NTP4302 by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 175A IDM, and 0.0093 ohm RDS. Ideal for SWITCHING applications due to its 80W Pdiss, ENHANCEMENT MODE operation, and built-in DIODE. Package: PLASTIC/EPOXY RECTANGULAR with THROUGH-HOLE terminals.
722 mJ
.0093 ohm
175 A
STD4NK80Z-1
STD4NK80Z-1 by STMicroelectronics is a N-channel power FET with 800V DS breakdown voltage. It features 12A max pulsed drain current and 3.5 ohm max RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 80W.
190 mJ
800 V
3 A
3.5 ohm
TO-251AA
12 A
Matte Tin (Sn)
STL150N3LLH6
STL150N3LLH6 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 150 A, a breakdown voltage of 30 V, and low on-resistance of 0.0035 Ω. Ideal for high-performance power management in compact designs.
.0035 ohm
132 A
STL85N6F3
STL85N6F3 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 85 A, a breakdown voltage of 60 V, and low on-resistance of 0.0057 Ω. This compact surface-mount device excels in power management solutions.
AVALANCHE ENERGY RATED
.0057 ohm
76 A
STB45NF06T4
STB45NF06T4 by STMicroelectronics is a N-CHANNEL FET with 60V DS breakdown voltage, 38A max drain current, and 0.028 ohm RDS(on). Ideal for switching applications, it features a built-in diode, 152A pulsed drain current, and 80W power dissipation in a small outline package.
135 mJ
245
NTP85N03G
NTP85N03G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 85A ID, and 0.0068 ohm RDS(ON). It is used for switching applications in enhancement mode with 45A IDM. The transistor operates at a max temperature of 150 °C and has a package style of Flange Mount.
TIN
NTB4302T4G
NTB4302T4G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, 175A IDM, and 0.0093 ohm RDS. Ideal for SWITCHING applications, it features a built-in DIODE in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE at up to 150 °C, it offers high power dissipation of 80W.
NTB85N03G
NTB85N03G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 85A Max ID. Ideal for SWITCHING applications, it features a built-in diode, 45A IDM, and 0.0068 ohm RDS(on). Suitable for surface mount with GULL WING terminals, it operates in ENHANCEMENT MODE up to 150 °C.
NTB85N03T4G
NTB85N03T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 85A ID, and 0.0068 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, 45A IDM, and 80W Pd. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package.
FQD6N60CTM
Fairchild Semiconductor
FQD6N60CTM by Fairchild Semiconductor is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a single configuration with built-in diode and can handle up to 16A of pulsed drain current. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 80W and an on-resistance of 2 ohm.
FAST SWITCHING
600 V
4 A
2 ohm
16 A
STL100NH3LL
STL100NH3LL by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 100A IDM, and 0.005 ohm RDS(on). Suitable for surface mount with built-in diode, it operates in enhancement mode up to 150°C.
25 A
.005 ohm
R-XDSO-N5
UNSPECIFIED
STL25N15F4
STL25N15F4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 6 A, a breakdown voltage of 150 V, and operates at temperatures up to 150 °C. Ideal for compact designs, it comes in a small outline package with built-in diode functionality.
125 mJ
150 V
6 A
.063 ohm
-55 Cel
24 A
TK380P65Y,RQ
Toshiba
Toshiba's TK380P65Y,RQ is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. It features 38.8A max pulsed drain current and 96mJ avalanche energy rating, suitable for high-power operations. With a small outline package style and GULL WING terminals, it offers efficient performance up to 150°C operating temperature.
96 mJ
650 V
9.7 A
.38 ohm
2.5 pF
38.8 A
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