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330 W Power Field Effect Transistors (FET) 11

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STI270N4F3 by STMicroelectronics

STI270N4F3

STMicroelectronics

STI270N4F3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 120A ID, and 0.0026 ohm RDS. Ideal for SWITCHING applications due to its 480A IDM and 1000mJ EAS ratings. Operating in ENHANCEMENT MODE, it has a max power dissipation of 330W at 175°C.

1000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.0026 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

330 W

480 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STP270N4F3 by STMicroelectronics

STP270N4F3

STMicroelectronics

STP270N4F3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 480A IDM, and 0.0029 ohm RDS. It's used for SWITCHING applications due to its 175°C max temp, 1000 mJ EAS rating, and SINGLE configuration with BUILT-IN DIODE.

1000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.0029 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

330 W

480 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STP160N75F3 by STMicroelectronics

STP160N75F3

STMicroelectronics

STP160N75F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 75 V, and power dissipation up to 330 W. Ideal for high-efficiency power management in various electronic devices.

SINGLE WITH BUILT-IN DIODE

75 V

120 A

120 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

330 W

480 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW160N75F3 by STMicroelectronics

STW160N75F3

STMicroelectronics

STW160N75F3 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 75 V, and power dissipation up to 330 W. Ideal for high-efficiency power management in various electronic devices.

SINGLE WITH BUILT-IN DIODE

75 V

120 A

120 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

330 W

480 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB185N55F3 by STMicroelectronics

STB185N55F3

STMicroelectronics

STB185N55F3 by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features 55V DS Breakdown Voltage, 120A Drain Current, and 0.0035 ohm On Resistance. With 480A Pulsed Drain Current, it operates in ENHANCEMENT MODE with 175°C Max Temp.

ULTRA-LOW RESISTANCE

1000 mJ

SINGLE WITH BUILT-IN DIODE

55 V

120 A

120 A

.0035 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

330 W

480 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

STP180N55F3 by STMicroelectronics

STP180N55F3

STMicroelectronics

STP180N55F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 55 V, and power dissipation up to 330 W. Ideal for high-efficiency power management in various electronic devices.

1000 mJ

SINGLE WITH BUILT-IN DIODE

55 V

120 A

120 A

.0038 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

330 W

480 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP270N04 by STMicroelectronics

STP270N04

STMicroelectronics

STP270N04 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0029 Ω).

1000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.0029 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

330 W

480 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB200N6F3 by STMicroelectronics

STB200N6F3

STMicroelectronics

STB200N6F3 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.

ULTRA-LOW RESISTANCE

918 mJ

SINGLE WITH BUILT-IN DIODE

60 V

120 A

120 A

.0035 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

330 W

480 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

STI200N6F3 by STMicroelectronics

STI200N6F3

STMicroelectronics

STI200N6F3 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with minimal resistance.

ULTRA-LOW RESISTANCE

918 mJ

SINGLE WITH BUILT-IN DIODE

60 V

120 A

120 A

.0038 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

330 W

480 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP200N6F3 by STMicroelectronics

STP200N6F3

STMicroelectronics

STP200N6F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.

ULTRA-LOW RESISTANCE

918 mJ

SINGLE WITH BUILT-IN DIODE

60 V

120 A

120 A

.0038 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

330 W

480 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IRF2804STRL7PP by Infineon Technologies

IRF2804STRL7PP

Infineon Technologies

Infineon Technologies' IRF2804STRL7PP is a power FET with N-channel polarity and a built-in diode. It is designed for switching applications, offering a min DS breakdown voltage of 40V and max pulsed drain current of 1360A. Its small outline package style and low on-resistance make it suitable for high-power operations.

630 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

160 A

.0016 ohm

METAL-OXIDE SEMICONDUCTOR

970 pF

R-PSSO-G6

e3

1

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

330 W

1360 A

YES

MATTE TIN OVER NICKEL

GULL WING

SINGLE

30

SWITCHING

SILICON