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3.2 W Power Field Effect Transistors (FET) 11

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK9MRR-65PKK,518 by NXP Semiconductors

BUK9MRR-65PKK,518

NXP Semiconductors

BUK9MRR-65PKK,518 from NXP Semiconductors is an N-channel power FET designed for enhancement mode operation. It supports a max drain current of 4.8 A and power dissipation of 3.2 W, making it ideal for efficient switching applications in high-temperature environments up to 150 °C.

4.8 A

4.8 A

METAL-OXIDE SEMICONDUCTOR

3

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

3.2 W

FET General Purpose Power

YES

30

NTLLD4951NFTWG by Onsemi

NTLLD4951NFTWG

Onsemi

NTLLD4951NFTWG by Onsemi is an N-CHANNEL Power FET with 13A max drain current and 3.2W max power dissipation. Ideal for applications requiring high power efficiency in a compact form factor, such as power supplies and motor control systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with surface mount capability for easy integration.

13 A

13 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

3.2 W

FET General Purpose Powers

YES

MATTE TIN

30

CSD17506Q5A by Texas Instruments

CSD17506Q5A

Texas Instruments

CSD17506Q5A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 150A IDM, and 0.0053 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.

AVALANCHE RATED

259 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

100 A

23 A

.0053 ohm

METAL-OXIDE SEMICONDUCTOR

65 pF

R-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.2 W

150 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

NVTFS5820NLTAG by Onsemi

NVTFS5820NLTAG

Onsemi

NVTFS5820NLTAG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 29A ID, and 0.0115 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include N-CHANNEL polarity, 247A IDM, and 48mJ EAS rating.

48 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

29 A

29 A

.0115 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

3.2 W

247 A

AEC-Q101

FET General Purpose Powers

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NVTFS5820NLTWG by Onsemi

NVTFS5820NLTWG

Onsemi

NVTFS5820NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 29A Drain Current, and 0.0115 ohm On Resistance. Ideal for automotive applications due to AEC-Q101 standard compliance and 175 °C operating temperature. Single configuration with built-in diode in a small outline package.

48 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

29 A

29 A

.0115 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

3.2 W

247 A

AEC-Q101

FET General Purpose Powers

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NVTFS5826NLTAG by Onsemi

NVTFS5826NLTAG

Onsemi

NVTFS5826NLTAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 127A IDM, and 0.032 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

20 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

20 A

7.6 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

3.2 W

127 A

Not Qualified

AEC-Q101

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NVTFS5826NLTWG by Onsemi

NVTFS5826NLTWG

Onsemi

NVTFS5826NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 127A IDM, and 0.032 ohm RDS(on). Ideal for applications requiring high power dissipation in a compact form factor. Suitable for use in enhancement mode operation at temperatures up to 175 °C.

20 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

20 A

7.6 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

3.2 W

127 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

STS17NF3LL by STMicroelectronics

STS17NF3LL

STMicroelectronics

STS17NF3LL by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 17 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for compact power management in electronic devices.

SINGLE WITH BUILT-IN DIODE

30 V

17 A

17 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

3.2 W

68 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

STS25NH3LL by STMicroelectronics

STS25NH3LL

STMicroelectronics

STS25NH3LL by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 25 A, a breakdown voltage of 30 V, and operates at temperatures from -55 °C to 175°C. Ideal for power management in compact devices, it ensures reliable performance with low on-resistance.

1300 mJ

SINGLE WITH BUILT-IN DIODE

30 V

25 A

25 A

.005 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.2 W

100 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

40

SWITCHING

SILICON

NTLTD7900ZR2G by Onsemi

NTLTD7900ZR2G

Onsemi

NTLTD7900ZR2G by Onsemi is an N-CHANNEL FET with 2 elements, built-in diode and resistor. It has a max pulsed drain current of 30A and min DS breakdown voltage of 20V. Ideal for switching applications, this transistor operates in enhancement mode with a max power dissipation of 3.2W at a max temp of 150 °C.

ESD PROTECTED

DRAIN

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

6 A

6 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.2 W

30 A

Not Qualified

FET General Purpose Power

YES

TIN

NO LEAD

DUAL

SWITCHING

SILICON

NTMFS4C01NT1G by Onsemi

NTMFS4C01NT1G

Onsemi

NTMFS4C01NT1G by Onsemi is a N-CHANNEL FET with 303A max drain current and 3.2W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features METAL-OXIDE SEMICONDUCTOR technology for efficient performance in surface mount configurations.

SINGLE

303 A

303 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

N-CHANNEL

3.2 W

FET General Purpose Power

YES

MATTE TIN

30