Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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PHP165NQ08T,127
NXP Semiconductors
PHP165NQ08T,127 from NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 75 A and power dissipation of 250 W, operating up to 150 °C. This transistor is perfect for efficient power management in various electronic devices.
SINGLE
75 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
250 W
FET General Purpose Power
NO
2SK3132(Q)
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 50 A;
50 A
AOB10N60L
Alpha & Omega Semiconductor
AOB10N60L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 10A max drain current and 250W power dissipation. It operates in enhancement mode, suitable for high-power applications like motor control and power supplies due to its single configuration and surface mount capability.
10 A
YES
NP160N04TUJ-E1-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .002 ohm;
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
160 A
.002 ohm
R-PSSO-G6
6
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
640 A
Not Qualified
GULL WING
SWITCHING
SILICON
STH130N10F3-2
STMicroelectronics
STH130N10F3-2 by STMicroelectronics is a N-channel Power FET with 100V DS breakdown voltage, 120A max drain current, and 0.0093 ohm on-resistance. Ideal for switching applications, it features a built-in diode, 450A pulsed drain current, and operates in enhancement mode at up to 175 °C.
ULTRA LOW RESISTANCE
125 mJ
100 V
120 A
.0093 ohm
R-PSSO-G2
e3
2
245
450 A
FET General Purpose Powers
Matte Tin (Sn) - annealed
30
STP130N10F3
STMicroelectronics STP130N10F3 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A Max Drain Current, 0.0096 ohm RDS(on), and 175 °C Max Operating Temp. Suitable for high-power switching circuits due to its 450A IDM and 125mJ EAS ratings.
.0096 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
THROUGH-HOLE
STW25N80K5
STW25N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 78A Max Pulsed Drain Current, 200mJ Avalanche Energy Rating, and 0.26 ohm Max Drain-Source On Resistance. Suitable for high-power circuits requiring efficient switching capabilities.
200 mJ
800 V
19.5 A
.26 ohm
TO-247
-55 Cel
78 A
Matte Tin (Sn)
STW23N85K5
STW23N85K5 by STMicroelectronics is a N-CHANNEL FET with 19A max drain current and 250W max power dissipation. Ideal for high-power applications, it operates at up to 150 °C, featuring metal-oxide semiconductor technology and matte tin terminal finish.
19 A
STW57N65M5-4
STW57N65M5-4 by STMicroelectronics is a N-CHANNEL FET with 42A max drain current and 250W power dissipation. Ideal for high-power applications, it operates at up to 150°C.
42 A
IPB80N06S207ATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; No. of Terminals: 2; Reference Standard: AEC-Q101;
530 mJ
55 V
80 A
.0063 ohm
215 pF
TO-263AB
320 A
AEC-Q101
IPI80N06S207AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; JEDEC-95 Code: TO-262AA; Package Style (Meter): IN-LINE;
.0066 ohm
TO-262AA
R-PSIP-T3
IN-LINE
IXTH75N10
IXYS Corporation
IXTH75N10 by IXYS Corp is a N-CHANNEL FET with 100V DS Breakdown Voltage, 75A ID, and 0.02 ohm RDS. It's used for SWITCHING applications due to its 300A IDM and 250W Pd. The PLASTIC/EPOXY package with THROUGH-HOLE terminals makes it suitable for various power electronics designs.
.02 ohm
TO-247AD
300 W
300 A
MATTE TIN
STW20NB50
STW20NB50 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 20A max drain current. It offers a low on-resistance of 0.25Ω and can handle up to 250W power dissipation. This versatile transistor operates efficiently in high-temperature environments up to 150 °C.
AVALANCHE RATED
1000 mJ
500 V
20 A
.25 ohm
75 pF
TO-247AC
57 ns
IXFR24N50Q
IXYS Corporation's IXFR24N50Q is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 96A max pulsed drain current, 0.23 ohm max on-resistance, and 150°C max operating temperature. The transistor has a single configuration with built-in diode in a plastic/epoxy package suitable for high-power operations.
1500 mJ
ISOLATED
22 A
.23 ohm
96 A
STB36NM60N
STB36NM60N by STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 25A max drain current, and 250W power dissipation. Ideal for high-performance power management in compact designs.
345 mJ
600 V
25 A
29 A
.105 ohm
116 A
SUM52N20-39P-E3
Vishay Intertechnology
Vishay Intertechnology's SUM52N20-39P-E3 is a N-channel FET with 200V DS breakdown voltage, 100A pulsed drain current, and 0.094 ohm max on-resistance. Ideal for power applications requiring high current handling and low on-resistance in a compact small outline package.
31 mJ
200 V
52 A
.094 ohm
100 A
MATTE TIN OVER NICKEL
PHP174NQ04LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Elements: 1; JEDEC-95 Code: TO-220AB;
560 mJ
.0048 ohm
240 A
STI150N10F7
STI150N10F7 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 110 A, a breakdown voltage of 100 V, and operates at temperatures from -55 °C to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
495 mJ
110 A
.0042 ohm
67 pF
440 A
SPB80N04S2-H4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Transistor Element Material: SILICON; Terminal Position: SINGLE;
660 mJ
.004 ohm
e0
TIN LEAD
SPB80N06S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Minimum DS Breakdown Voltage: 55 V; Maximum Operating Temperature: 175 Cel;
SPB80N06S2L-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; No. of Terminals: 2; Maximum Drain Current (ID): 80 A;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.0084 ohm
SPP80N04S2-H4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 175 Cel;
SPP80N06S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Elements: 1; Maximum Operating Temperature: 175 Cel;
SPP80N06S2L-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .0084 ohm;
SPI70N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Terminal Finish: MATTE TIN; Qualification: Not Qualified;
700 mJ
70 A
.025 ohm
280 A
SPB80N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Terminal Form: GULL WING; Maximum Drain Current (ID): 80 A;
.024 ohm
220
SPI80N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Terminals: 3; Maximum Operating Temperature: 175 Cel;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
SPP80N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
FQP90N10V2
Fairchild Semiconductor
FQP90N10V2 by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 360A IDM and 0.01 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 250W and can withstand temperatures up to 175°C.
2430 mJ
90 A
.01 ohm
360 A
IRFB4310ZGPBF
International Rectifier
IRFB4310ZGPBF by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 560A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.006 ohm RDS(on), and 175°C max operating temp.
130 mJ
127 A
.006 ohm
560 A
IPB065N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Qualification: Not Qualified; JESD-609 Code: e3;
60 V
.0062 ohm
IPP070N06NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Terminal Form: THROUGH-HOLE; Transistor Element Material: SILICON;
.007 ohm
IRLH5030TR2PBF
IRLH5030TR2PBF by International Rectifier is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 230mJ, suitable for high-power operations. With a compact SMALL OUTLINE package and 0.0099 ohm RDS(on), it ensures efficient performance in various electronic devices.
230 mJ
13 A
.0099 ohm
R-PDSO-N5
5
400 A
NO LEAD
DUAL
JANSR2N7585U2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Avalanche Energy Rating (EAS): 240 mJ; Maximum Pulsed Drain Current (IDM): 200 A;
HIGH RELIABILITY
240 mJ
250 V
.04 ohm
R-CDSO-N3
CERAMIC, METAL-SEALED COFIRED
200 A
MIL-19500; RH - 100K Rad(Si)
150 ns
200 ns
STP40N65M2
STP40N65M2 from STMicroelectronics is a powerful N-channel MOSFET ideal for high-efficiency applications. It supports a max drain current of 32 A and power dissipation up to 250 W, operating at temperatures up to 150 °C. Perfect for power management in industrial systems.
32 A
STP42N60M2-EP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 136 A;
BULK: 1000
800 mJ
34 A
.087 ohm
2.5 pF
136 A
STW42N60M2-EP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Elements: 1; Maximum Drain Current (ID): 34 A;
STWA20N95DK5
STWA20N95DK5 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 950V breakdown voltage and 72A max pulsed drain current. It operates in enhancement mode with a power dissipation of up to 250W. This robust transistor ensures reliable performance in demanding environments.
520 mJ
950 V
18 A
.33 ohm
5 pF
72 A
IPI120N10S403AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Operating Temperature: 175 Cel; Terminal Finish: TIN;
770 mJ
.0039 ohm
300 pF
480 A
TIN
IPP120N10S403AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; JESD-609 Code: e3; JEDEC-95 Code: TO-220AB;
JANSR2N7583U2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Style (Meter): SMALL OUTLINE;
283 mJ
56 A
.028 ohm
224 A
Qualified
FPF1C2P5BF07A
Onsemi
FPF1C2P5BF07A by Onsemi is an N-CHANNEL Power FET with 650V DS Breakdown Voltage and 156A IDM. Ideal for POWER CONTROL applications, it features a max power dissipation of 250W, 0.09 ohm RDS(on), and operates b/w -40 to 150 °C.
LOW CONDUCTION LOSS
COMPLEX
650 V
36 A
.09 ohm
R-XUFM-X24
24
-40 Cel
UNSPECIFIED
156 A
UL APPROVED
PRESS FIT
UPPER
POWER CONTROL
STH47N60DM6-2AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Reference Standard: AEC-Q101; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.08 ohm
2 pF
137 A
STI47N60DM6AG
STI47N60DM6AG from STMicroelectronics is a robust N-channel FET designed for switching applications, featuring a 600V breakdown voltage and 36A max drain current. It offers high power dissipation of 250W and operates efficiently in -55 °C to 150 °C. Ideal for demanding power management tasks.
STWA40N60M2
STWA40N60M2 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 136A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for high-power circuits with robust performance.
500 mJ
.088 ohm
2.4 pF
NXH010P120MNF1PTNG
NXH010P120MNF1PTNG by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 342A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features SERIES CONNECTED configuration with METAL-OXIDE SEMICONDUCTOR technology. Operating from -40 to 175 °C, this RECTANGULAR package has 18 terminals and a max power dissipation of 250W.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
1200 V
114 A
.014 ohm
39 pF
R-XUFM-X18
18
342 A
SILICON CARBIDE
NXH010P120MNF1PNG
NXH010P120MNF1PNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 342A IDM, and 0.014 ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with 2 elements, built-in diode & thermistor. Operating in enhancement mode, it has a max power dissipation of 250W and operates b/w -40 to 175 °C.
NXH010P120MNF1PTG
NXH010P120MNF1PTG by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 342A IDM, and 0.014 ohm RDS(on). It is used for SWITCHING applications in SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features METAL-OXIDE SEMICONDUCTOR tech and SILICON CARBIDE material.
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