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250 W Power Field Effect Transistors (FET) 51

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH010P120MNF1PG by Onsemi

NXH010P120MNF1PG

Onsemi

NXH010P120MNF1PG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 342A IDM, and 0.014 ohm RDS(on). Ideal for switching applications in power electronics due to its SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features a METAL-OXIDE SEMICONDUCTOR technology and built-in diode & thermistor.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

114 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

39 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

342 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

IXTP60N20X4 by Littelfuse

IXTP60N20X4

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 350 mJ;

AVALANCHE RATED

350 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

60 A

.021 ohm

METAL-OXIDE SEMICONDUCTOR

.95 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

106 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXTH60N20X4 by Littelfuse

IXTH60N20X4

Littelfuse

IXTH60N20X4 by Littelfuse is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 106A IDM, 350mJ EAS, and 0.021 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 250W and can handle up to 60A ID.

AVALANCHE RATED

350 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

60 A

.021 ohm

METAL-OXIDE SEMICONDUCTOR

.95 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

106 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON