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21 W Power Field Effect Transistors (FET) 12

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVTFS4824NTAG by Onsemi

NVTFS4824NTAG

Onsemi

NVTFS4824NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 46A Drain Current, and 0.0075 ohm On Resistance. Ideal for power applications requiring high current handling in compact spaces. Operates in Enhancement Mode with built-in diode, suitable for surface mount designs.

72 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

46 A

46 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

21 W

402 A

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NVTFS4824NTWG by Onsemi

NVTFS4824NTWG

Onsemi

NVTFS4824NTWG by Onsemi is a single N-channel FET with built-in diode, featuring a min DS breakdown voltage of 30V and max pulsed drain current of 402A. Ideal for power applications, this MOSFET has an avalanche energy rating of 72mJ and max operating temperature of 175 °C.

72 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

46 A

46 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

21 W

402 A

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NVTFS4823NWFTAG by Onsemi

NVTFS4823NWFTAG

Onsemi

NVTFS4823NWFTAG by Onsemi is a single N-channel Power FET with 30A max drain current and 21W max power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive systems and industrial controls.

SINGLE

30 A

30 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

21 W

FET General Purpose Power

YES

MATTE TIN

30

NVTFS4823NWFTWG by Onsemi

NVTFS4823NWFTWG

Onsemi

NVTFS4823NWFTWG by Onsemi is a single N-channel Power FET with 30A max drain current and 21W max power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive systems or industrial equipment.

SINGLE

30 A

30 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

21 W

FET General Purpose Power

YES

MATTE TIN

30

NVTFS4824NWFTAG by Onsemi

NVTFS4824NWFTAG

Onsemi

NVTFS4824NWFTAG by Onsemi is a single N-channel Power FET with 46A max drain current and 21W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and industrial control systems.

SINGLE

46 A

46 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

21 W

FET General Purpose Power

YES

MATTE TIN

30

NVTFS4824NWFTWG by Onsemi

NVTFS4824NWFTWG

Onsemi

NVTFS4824NWFTWG by Onsemi is a single N-channel power FET with 46A max drain current and 21W max power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive systems and industrial controls.

SINGLE

46 A

46 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

21 W

FET General Purpose Power

YES

MATTE TIN

30

NVTFS5811NLWFTWG by Onsemi

NVTFS5811NLWFTWG

Onsemi

NVTFS5811NLWFTWG by Onsemi is a N-CHANNEL FET with 40A max drain current and 21W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for industrial use in harsh environments. Its single configuration and surface mount design enhance ease of integration into various electronic systems.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

21 W

FET General Purpose Power

YES

MATTE TIN

30

NVTFS4823NTAG by Onsemi

NVTFS4823NTAG

Onsemi

NVTFS4823NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 198A IDM, and 0.0175 ohm RDS(on). Ideal for power applications requiring high current handling in a compact form factor. Operating in enhancement mode, it offers efficient performance up to 175°C with a max power dissipation of 21W.

28.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

30 A

13 A

.0175 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

21 W

198 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NVTFS4823NTWG by Onsemi

NVTFS4823NTWG

Onsemi

NVTFS4823NTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 198A IDM, and 0.0175 ohm RDS(on). Ideal for applications requiring high drain current handling in enhancement mode operation. Suitable for power management systems due to its high power dissipation of 21W and small outline package style.

28.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

30 A

13 A

.0175 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

21 W

198 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NVTFS5811NLTAG by Onsemi

NVTFS5811NLTAG

Onsemi

NVTFS5811NLTAG by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 354A pulsed drain current. It is used in applications requiring high power dissipation, such as automotive systems and industrial equipment due to its 21W max power dissipation and small outline package style.

65 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

40 A

16 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

21 W

354 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NVTFS5811NLTWG by Onsemi

NVTFS5811NLTWG

Onsemi

NVTFS5811NLTWG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 354A IDM, and 0.01 ohm RDS(on). Ideal for applications requiring high power dissipation in a small outline package. Enhances performance in electronic devices operating at up to 175 °C.

65 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

40 A

16 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

21 W

354 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

IPG15N06S3L-45 by Infineon Technologies

IPG15N06S3L-45

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 21 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;

LOGIC LEVEL COMPATIBLE

47 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

55 V

15 A

17 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

21 W

60 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SILICON